Reference health
Synaptic Metaplasticity Realized in Oxide Memristive Devices
50/50 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 50 checked references that resolve
resolves10.1016/S0301-0082(97)00018-X
Metaplasticity: A new vista across the field of synaptic plasticity
resolves10.1021/nl201040y
Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
resolves10.1002/adfm.201101935
A Memristive Nanoparticle/Organic Hybrid Synapstor for Neuroinspired Computing
resolves10.1002/adfm.201103148
Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
resolves10.1002/adma.201103723
The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse‐Neuron System
resolves10.1039/c3nr01834b
Synaptic behavior and STDP of asymmetric nanoscale memristors in biohybrid systems
resolves10.1038/srep04906
Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems
resolves10.1021/nn503464q
Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
resolves10.1016/j.sse.2012.09.006
Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices
resolves10.1002/pssa.201431674
Complementary and bipolar regimes of resistive switching in TiN/HfO<sub>2</sub>/TiN stacks grown by atomic‐layer deposition
resolves10.1109/TED.2015.2440102
HfO<sub>2</sub>-Based OxRAM Devices as Synapses for Convolutional Neural Networks
resolves10.1063/1.4905792
Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices
resolves10.1016/j.neuroscience.2009.03.015
Asymmetric spike-timing dependent plasticity of striatal nitric oxide-synthase interneurons
resolves10.1523/JNEUROSCI.0900-07.2007
Changes of the EPSP Waveform Regulate the Temporal Window for Spike-Timing-Dependent Plasticity
resolves10.1038/nmat3054
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
resolves10.1088/0034-4885/75/7/076502
Emerging memories: resistive switching mechanisms and current status
resolves10.1063/1.4759239
The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells
resolves10.1109/TED.2006.888752
Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories
resolves10.1063/1.3599559
Physical origin of the resistance drift exponent in amorphous phase change materials
resolves10.1002/adfm.201501517
How Does Moisture Affect the Physical Property of Memristance for Anionic–Electronic Resistive Switching Memories?
resolves10.1063/1.4726084
Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO<i>3−x</i>-based nanoionics devices
resolves10.1021/nn302510e
On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration
resolves10.1038/nmat1614
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
resolves10.1039/C3NR05426H
Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides
resolves10.1038/35046067
Calcium stores regulate the polarity and input specificity of synaptic modification
resolves10.1038/ncomms4158
Artificial synapse network on inorganic proton conductor for neuromorphic systems
resolves10.1088/0957-4484/24/38/384003
Synaptic plasticity and memory functions achieved in a WO<sub>3−<i>x</i></sub>-based nanoionics device by using the principle of atomic switch operation
resolves10.1073/pnas.152343099
A unified model of NMDA receptor-dependent bidirectional synaptic plasticity
resolves10.1002/adfm.201501427
Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics
resolves10.1002/adfm.201402286
Memristor Kinetics and Diffusion Characteristics for Mixed Anionic‐Electronic SrTiO<sub>3‐δ</sub> Bits: The Memristor‐Based Cottrell Analysis Connecting Material to Device Performance
resolves10.1002/adfm.201501019
Donor‐Induced Performance Tuning of Amorphous SrTiO<sub>3</sub> Memristive Nanodevices: Multistate Resistive Switching and Mechanical Tunability
resolves10.1016/S0022-0728(03)00342-5
The growth kinetics of thin anodic WO3 films investigated by electrochemical impedance spectroscopy
resolves10.1016/0013-4686(95)00312-6
A new method for estimating the diffusivities of vacancies in passive films
resolves10.1016/S0013-4686(97)00037-6
The ability of a surface charge approach to describe barrier film growth on tungsten in acidic solutions
resolves10.1038/srep04058
Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices
The 2 references without a DOI — listed, not checked
no DOI — not checkedThe Organization of Behavior: A Neurophysiological Theory
no DOI — not checkede_1_2_4_21_1
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