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Changes in the Raman spectra of monolayer MoS<sub>2</sub> upon thermal annealing

https://doi.org/10.1002/jrs.5476
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

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The 45 checked references that resolve
resolves10.1038/nchem.1589
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
resolves10.1002/jrs.5234
<scp>SERS</scp> analysis of selectively captured exosomes using an integrin‐specific peptide ligand
resolves10.1002/jrs.5200
Resonance Raman effects in transition metal dichalcogenides
resolves10.1039/C39920001386
1T-MoS <sub>2</sub> , a new metallic modification of molybdenum disulfide
resolves10.1016/S0039-6028(99)00086-2
Stabilization of the rhombohedral polytype in MoS2 and WS2 microtubes: TEM and AFM study
resolves10.1023/A:1018538424373
Synthesis and characterization of molybdenum disulphide formed from ammonium tetrathiomolybdate
resolves10.1038/ncomms7293
Exploring atomic defects in molybdenum disulphide monolayers
resolves10.1021/nl4007479
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
resolves10.1021/nl903868w
Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
resolves10.1103/PhysRevLett.105.136805
Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>MoS</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> : A New Direct-Gap Semiconductor
resolves10.1038/nnano.2010.279
Single-layer MoS2 transistors
resolves10.1021/nl403036h
Tunable Photoluminescence of Monolayer MoS<sub>2</sub> via Chemical Doping
resolves10.1021/nl400516a
Electroluminescence in Single Layer MoS<sub>2</sub>
resolves10.1021/nl401544y
Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
resolves10.1038/nnano.2012.95
Valley polarization in MoS2 monolayers by optical pumping
resolves10.1038/nnano.2012.96
Control of valley polarization in monolayer MoS2 by optical helicity
resolves10.1021/nn500532f
Strong Photoluminescence Enhancement of MoS<sub>2</sub> through Defect Engineering and Oxygen Bonding
resolves10.1103/PhysRevB.91.195411
Effect of disorder on Raman scattering of single-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mo</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1038/srep02657
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
resolves10.1016/j.cplett.2013.10.034
Tunable sulfur desorption in exfoliated MoS2 by means of thermal annealing in ultra-high vacuum
resolves10.1002/smll.201301542
Layer Thinning and Etching of Mechanically Exfoliated MoS<sub>2</sub> Nanosheets by Thermal Annealing in Air
resolves10.1002/jrs.4416
Enhancement of lattice defect signatures in graphene and ultrathin graphite using tip‐enhanced Raman spectroscopy
resolves10.1002/jrs.4998
Hydrothermal reduction of graphene oxide; effect on surface‐enhanced Raman scattering
resolves10.1021/nl0808684
Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping
resolves10.1021/nl1029607
Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO<sub>2</sub> Substrate
resolves10.1016/j.carbon.2009.12.057
Quantifying ion-induced defects and Raman relaxation length in graphene
resolves10.1021/nl300901a
Probing the Nature of Defects in Graphene by Raman Spectroscopy
resolves10.1016/j.synthmet.2015.03.018
Transition of graphene oxide-coated fiber bundles from insulator to conductor by chemical reduction
resolves10.1021/acsnano.6b00895
Photochemical Reaction in Monolayer MoS<sub>2</sub> <i>via</i> Correlated Photoluminescence, Raman Spectroscopy, and Atomic Force Microscopy
resolves10.1002/jrs.5196
Enhanced Raman and photoluminescence response in monolayer MoS<sub>2</sub> due to laser healing of defects
resolves10.1039/C8RA01849A
Homogeneity and tolerance to heat of monolayer MoS <sub>2</sub> on SiO <sub>2</sub> and h-BN
resolves10.1039/c3nr03220e
Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates
resolves10.1038/nnano.2010.172
Boron nitride substrates for high-quality graphene electronics
resolves10.1021/nn1003937
Anomalous Lattice Vibrations of Single- and Few-Layer MoS<sub>2</sub>
resolves10.1007/s12274-014-0424-0
The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
resolves10.1063/1.2838745
Interference enhancement of Raman signal of graphene
resolves10.1016/0378-4363(80)90257-0
Raman studies of MoS2 at high pressure
resolves10.1103/PhysRevB.89.125406
Photoluminescence of freestanding single- and few-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>MoS</mml:mtext><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1063/1.123658
The adsorption of oxygen at GaN surfaces
resolves10.1186/1556-276X-8-425
Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field
resolves10.1021/acsnano.5b07388
Raman Shifts in Electron-Irradiated Monolayer MoS<sub>2</sub>
resolves10.1103/PhysRevB.84.155413
Phonons in single-layer and few-layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>and WS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevMaterials.1.024002
Atomic-layered <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> under high pressure: Bimodal adhesion and biaxial strain effects
resolves10.1063/1.4914968
Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
resolves10.1021/nn202852j
Nature of Electronic States in Atomically Thin MoS<sub>2</sub> Field-Effect Transistors
The 2 references without a DOI — listed, not checked
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no DOI — not checkede_1_2_6_39_1
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