Reference health
Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering
70/70 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
8 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 70 checked references that resolve
resolves10.1016/S0167-5729(99)00002-3
Surface photovoltage phenomena: theory, experiment, and applications
resolves10.1116/1.1317922
Surface Photovoltage Spectroscopy—A New Approach to the Study of High-Gap Semiconductor Surfaces
resolves10.1016/0039-6028(80)90574-9
Optical properties of dangling-bond states at cleaved silicon surfaces
resolves10.1016/0039-6028(75)90036-9
Surface photovoltage spectroscopy of electronic surface states on cleaved germanium(111) surfaces
resolves10.1103/PhysRevB.15.865
Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfaces
resolves10.1063/1.117708
Determining band offsets using surface photovoltage spectroscopy: The InP/In0.53Ga0.47As heterojunction
resolves10.1016/S0038-1098(97)00114-2
Observation of excitonic features in multiple quantum wells by normalized Kelvin probe spectroscopy at low temperatures
resolves10.1016/S0927-0248(97)00205-5
Quality control and characterization of Cu(In,Ga)Se2-based thin-film solar cells by surface photovoltage spectroscopy
resolves10.1063/1.121936
Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor
resolves10.1063/1.126869
Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence
resolves10.1016/S0169-4332(96)00121-3
In-situ monitoring of surface chemistry and charge transfer at semiconductor surfaces
resolves10.1063/1.371562
Band gap determination of semiconductor powders via surface photovoltage spectroscopy
resolves10.1143/JJAP.21.624
Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
resolves10.1063/1.1148251
A high-resolution scanning Kelvin probe microscope for contact potential measurements on the 100 nm scale
resolves10.1103/PhysRevLett.64.1051
Atomically resolved carrier recombination at Si(111)-7×7 surfaces
resolves10.1103/PhysRevLett.65.456
Optical interactions in the junction of a scanning tunneling microscope
resolves10.1116/1.585424
Semiconductor characterization by scanning force microscope surface photovoltage microscopy
resolves10.1080/01442350050020897
Surface photovoltage imaging for the study of local electronic structure at semiconductor surfaces
resolves10.1103/PhysRevB.61.11041
Measuring minority-carrier diffusion length using a Kelvin probe force microscope
resolves10.1063/1.125039
Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy
resolves10.1063/1.348712
Characterization of interface states at III-V compound semiconductor-metal interfaces
resolves10.1149/1.2127325
Electronic Characterization of Heteroepitaxial Silicon‐on‐Sapphire by Surface Photovoltage Spectroscopy
resolves10.1063/1.120322
Determination of the energy diagram of the dithioketopyrrolopyrrole/SnO2:F heterojunction by surface photovoltage spectroscopy
resolves10.1021/la990116c
Steady-State Spectroscopic and Photovoltage Studies of Hemin and Hemin/<i>n</i>-Octadecylamine Langmuir−Blodgett Films
resolves10.1016/0039-6028(91)90112-6
Near-band gap transitions in the surface photovoltage spectra for GaAs, GaP and Si surfaces
resolves10.1557/PROC-482-573
Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy
resolves10.1080/10408437508243484
Electronic properties of cleaved GaAs(110) surfaces covered with cesium
resolves10.1103/PhysRevB.18.2431
Chemical reactions and local charge redistribution at metal-CdS and CdSe interfaces
resolves10.1021/ja9906150
Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP
resolves10.1116/1.571055
On the electronic structure of clean, 2×1 reconstructed silicon (001) surfaces
resolves10.1016/0039-6028(80)90389-1
Surface photovoltage, band-bending and surface states on a-Si : H
resolves10.1016/0368-2048(90)80338-B
Surface photovoltage spectroscopy investigations of the electronic surface states on clean and oxygen-exposed polar GaAs(100) and GaAs(111) surfaces
resolves10.1103/PhysRevB.21.625
Determination of surface states on Si(111) by surface photovoltage spectroscopy
resolves10.1021/la981459y
Structural Characterizations of C<sub>60</sub>-Derivative Langmuir−Blodgett Films and Their Photovoltaic Behaviors
resolves10.1007/BF00617963
EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals
resolves10.1088/0268-1242/8/9/009
A study of Fe-doped and undoped InP by surface photovoltage spectroscopy
resolves10.1016/0042-207X(94)00116-2
Influence of production technology on surface properties of Cd0.85Mn0.15Te intrinsic and gallium doped
resolves10.1063/1.49432
Band diagram and band line-up of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction and its response to air annealing
resolves10.1016/0040-6090(94)05609-H
Relaxation mechanisms of electronic excitation in nanostructures of porous silicon
resolves10.1063/1.121527
Surface photovoltage spectroscopy of n-n+ and p-n+ AlGaAs/GaAs heterojunctions
resolves10.1016/S0921-4526(99)00611-0
Hydrogen passivation of AlxGa1−xAs/GaAs studied by surface photovoltage spectroscopy
resolves10.1116/1.586203
Scanning tunneling optical spectroscopy of semiconductor thin films and quantum wells
resolves10.1063/1.366807
Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure
resolves10.1016/S0921-5107(00)00618-8
Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures
resolves10.1103/PhysRevB.59.9748
Yellow luminescence and related deep levels in unintentionally doped GaN films
resolves10.1063/1.103665
Effects of reactive versus unreactive metals on the surface recombination velocity at CdS and CdSe(112̄0) interfaces
resolves10.1016/0042-207X(94)00113-8
Photoelectronic properties of the GaAs:Si epitaxial layers on the GaAs substrate
The 8 references without a DOI — listed, not checked
no DOI — not checkedSemiconductor Surfaces
no DOI — not checkedPhysics of Semiconductor Devices
no DOI — not checkedPhysical Properties of Semiconductors
no DOI — not checkedScanning Tunneling Microscopy and Spectroscopy
no DOI — not checkede_1_2_1_45_2
no DOI — not checkede_1_2_1_46_2
no DOI — not checkede_1_2_1_64_2
no DOI — not checkede_1_2_1_66_2
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