Reference health
Design and simulation of double-lightly doped MOSCNT using non-equilibrium Green’s function
19/19 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
5 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 19 checked references that resolve
resolves10.1109/TED.2003.821883
A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube Transistors
resolves10.1109/TNANO.2005.851427
High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
resolves10.1016/j.sse.2008.01.021
Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts
resolves10.1109/TED.2010.2041282
Numerical Study of Lightly Doped Drain and Source Carbon Nanotube Field Effect Transistors
resolves10.1021/nl035097c
Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method
resolves10.1063/1.2146065
Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors
resolves10.1016/j.sse.2004.07.002
Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
resolves10.1109/TED.2005.859654
Comparing Carbon Nanotube Transistors—The Ideal Choice: A Novel Tunneling Device Design
resolves10.1109/TED.2007.902900
Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors
resolves10.1007/s10825-010-0308-9
Performance optimization of MOS-like carbon nanotube-FETs based on electrostatic doping
resolves10.1021/nl0508624
The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
The 5 references without a DOI — listed, not checked
no DOI — not checkedO. Siyuranga, S. Koswatta, D. Nikonov, M.S. Lundstrom, Computational study of carbon nanotube p-i-n tunnel FETs, in IEEE Int Electron Dev. Meet (2005), pp. 518–521
no DOI — not checkedZ. Ren, ‘Nanoscale MOSFETs: physics, simulation, and design. Ph.D. thesis, the Purdue University, USA, 2001
no DOI — not checkedJ. Guo, Carbon nanotube electronics: modeling, physics and applications. Ph.D. thesis, the Purdue University, USA, 2004
no DOI — not checkedInternational Technology Roadmap for Semiconductors (ITRS) (2009), http://www.itrs.net/Links/2009ITRS/Home2009.htm
no DOI — not checkedJ. Guo, A. Javey, H. Dai, M. Lundstrom, Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistor, in IEEE Int. Meet. Electron. Dev., IEDM (2004)
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
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