Reference health

Mechanisms of strain induced roughening and dislocation multiplication in SixGe1-xthin films

https://doi.org/10.1007/s11664-997-0241-2
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27/27 checkable references clean · checked 2026-08-10

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

10 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 27 checked references that resolve
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Crystal Interfaces. Part II. Finite Overgrowths
resolves10.1103/PhysRevLett.64.1943
Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
resolves10.1126/science.271.5251.920
Small Clusters Hit the Big Time
resolves10.1063/1.348852
Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100)
resolves10.1103/PhysRevB.50.11687
Critical layer thickness for self-assembled InAs islands on GaAs
resolves10.1063/1.113822
Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs
resolves10.1063/1.111502
Self-organized growth of regular nanometer-scale InAs dots on GaAs
resolves10.1007/BF02642562
Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion
resolves10.1103/PhysRevLett.77.1330
Morphological Evolution of Strained Films by Cooperative Nucleation
resolves10.1557/S0883769400035314
Kinetic Pathways to Strain Relaxation in the Si-Ge System
resolves10.1103/PhysRevLett.65.1020
Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
resolves10.1103/PhysRevLett.72.3570
Competing relaxation mechanisms in strained layers
resolves10.1126/science.268.5214.1161
Crack-Like Sources of Dislocation Nucleation and Multiplication in Thin Films
resolves10.1103/PhysRevLett.75.2368
Misfit Dislocation Sources at Surface Ripple Troughs in Continuous Heteroepitaxial Layers
resolves10.1103/PhysRevLett.77.4046
Structural Transition in Large-Lattice-Mismatch Heteroepitaxy
resolves10.1103/PhysRevLett.73.3006
Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain
resolves10.1051/jphys:01987004803035300
The roughening transition of crystal surfaces. I. static and dynamic renormalization theory, crystal shape and facet growth
resolves10.1103/PhysRevLett.71.1744
Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation
resolves10.1557/S0883769400057389
High Resolution Z-Contrast Imaging of Semiconductor Interfaces
resolves10.1103/PhysRevLett.64.938
High-resolution incoherent imaging of crystals
resolves10.1063/1.353815
Morphological instability in epitaxially strained dislocation-free solid films: Linear stability theory
resolves10.1103/PhysRevLett.71.1593
Cracklike surface instabilities in stressed solids
resolves10.1016/0956-7151(94)90429-4
Nonlinear evolution of the stress-driven morphological instability in a two-dimensional semi-infinite solid
resolves10.1016/0022-5096(91)90035-M
Stress concentration at slightly undulating surfaces
resolves10.1016/0020-7683(93)90208-O
Stress singularities along a cycloid rough surface
resolves10.1080/14786437408213555
Ductile versus brittle behaviour of crystals
resolves10.1063/1.345074
Dislocation injection in strained multilayer structures
The 10 references without a DOI — listed, not checked
no DOI — not checkedM.A. Grinfeld, Sov. Phys. Dokl. 31, 831 (1986).
no DOI — not checkedD.E. Jesson, K.M. Chen, S.J. Pennycook, T. Thundat and R.J. Warmack, Proc. 23rd Intl. Conf. Physics of Semiconductors 2, 1253 (1996).
no DOI — not checkedV.I. Marchenko, JETP Lett. 33, 381 (1981); J.M. Rickman and D.J. Srolovitz, Surf. Sci. 284, 211 (1993). See also J. Tersoff and R.M. Tromp, Phys. Rev. Lett. 70, 2782 (1993) for a treatment of faceted 3D islands.
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no DOI — not checkedK.M. Chen, D.E. Jesson, S.J. Pennycook, T. Thundat and R.J. Warmack, Phys. Rev. B Rapid Communications, in press.
no DOI — not checkedH.T. Dobbs, A. Zangwill and D.D. Vvedensky, Surface Diffusion; Atomistic and Collective Processes, (New York: Plenum, 1996).
no DOI — not checkedD.E. Jesson, S.J. Pennycook, J-M. Baribeau and D.C. Houghton, Scanning Microsc. 8, 849 (1994).
no DOI — not checkedD.E. Jesson, S.J. Pennycook, J-M. Baribeau, and D.C. Houghton, MRS Symp. Proc. 312, 47 (Pittsburgh, PA: Mater. Res. Soc, 1993).
no DOI — not checkedC-H. Chiu and H. Gao, Mater. Res. Soc. Symp. Proc. 317, (Pittsburgh, PA: Mater. Res. Soc, 1994), p. 369.
no DOI — not checkedSee, for example, J.F. Knott, Fundamentals of Fracture Mechanics, (New York: John Wiley and Sons, 1973), p. 57.
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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