Reference health
Chemical vapor deposition growth of monolayer MoSe2 nanosheets
48/48 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 48 checked references that resolve
resolves10.1098/rspa.1963.0075
Physical properties of layer structures : optical properties and photoconductivity of thin crystals of molybdenum disulphide
resolves10.1080/01614948909351347
Structure and Function of the Catalyst and the Promoter in Co—Mo Hydrodesulfurization Catalysts
resolves10.1126/science.1215868
A Molecular MoS
<sub>2</sub>
Edge Site Mimic for Catalytic Hydrogen Generation
resolves10.1063/1.105689
Characterization of nanometer scale wear and oxidation of transition metal dichalcogenide lubricants by atomic force microscopy
resolves10.1021/ja201269b
MoS<sub>2</sub> Nanoparticles Grown on Graphene: An Advanced Catalyst for the Hydrogen Evolution Reaction
resolves10.1103/PhysRevB.83.245213
Influence of quantum confinement on the electronic structure of the transition metal sulfide<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>T</mml:mi></mml:mrow></mml:math>S<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevB.35.6195
Electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">WSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>. I. Band-structure calculations and photoelectron spectroscopy
resolves10.1109/TED.2011.2159221
Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
resolves10.1002/smll.201201224
Fabrication of Flexible MoS<sub>2</sub> Thin‐Film Transistor Arrays for Practical Gas‐Sensing Applications
resolves10.1002/smll.201101016
Fabrication of Single‐ and Multilayer MoS<sub>2</sub> Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature
resolves10.1021/ja4019572
Single-Layer MoS<sub>2</sub>-Based Nanoprobes for Homogeneous Detection of Biomolecules
resolves10.1002/smll.201301542
Layer Thinning and Etching of Mechanically Exfoliated MoS<sub>2</sub> Nanosheets by Thermal Annealing in Air
resolves10.1002/adma.201104798
Synthesis of Large‐Area MoS<sub>2</sub> Atomic Layers with Chemical Vapor Deposition
resolves10.1002/smll.201102654
Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate
resolves10.1021/nl2043612
Growth of Large-Area and Highly Crystalline MoS<sub>2</sub> Thin Layers on Insulating Substrates
resolves10.1021/nl400687n
Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces
resolves10.1038/nmat3633
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
resolves10.1038/nmat3673
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
resolves10.1051/rphysap:01990002508080700
MoSe2 thin films synthesized by solid state reactions between Mo and Se thin films
resolves10.1246/cl.2001.772
Hydrothermal Synthesis and Characterization of Single-Molecular-Layer MoS2 and MoSe2
resolves10.1021/nl400258t
Synthesis of MoS<sub>2</sub> and MoSe<sub>2</sub> Films with Vertically Aligned Layers
resolves10.1021/nl302584w
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe<sub>2</sub> versus MoS<sub>2</sub>
resolves10.1038/nnano.2013.219
Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
resolves10.1038/nmat3518
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
resolves10.1038/ncomms3096
Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene
resolves10.1021/ja109793s
Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper
resolves10.1038/nchem.1277
Topological insulator nanostructures for near-infrared transparent flexible electrodes
resolves10.1021/nn403454e
Controlled Growth of High-Quality Monolayer WS<sub>2</sub> Layers on Sapphire and Imaging Its Grain Boundary
resolves10.1002/chem.200204635
Formation of MoS<sub>2</sub> Inorganic Fullerenes (IFs) by the Reaction of MoO<sub>3</sub> Nanobelts and S
resolves10.1364/OE.21.004908
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
resolves10.1007/s12274-013-0346-2
Thickness-dependent patterning of MoS2 sheets with well-oriented triangular pits by heating in air
resolves10.1103/PhysRevB.77.104105
First-principles determination of static potential energy surfaces for atomic friction in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Mo</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Mo</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevB.87.125415
Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
The 1 reference without a DOI — listed, not checked
no DOI — not checkedHuang, J. K.; Pu, J.; Chuu, C. P.; Hsu, C. L.; Chiu, M. H.; Juang, Z. Y.; Chang, Y. H.; Chang, W. H.; Iwasa, Y.; Chou M. Y. Large-area and highly crystalline WSe2 monolayers: From synthesis to device applications. Preprint at http://arxiv.org/abs/1304.7365 .
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