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Physical mechanisms limiting the performance and the reliability of GaN-based LEDs
94/94 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
21 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 94 checked references that resolve
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Simulation of an indium gallium nitride quantum well light‐emitting diode with the non‐equilibrium Green's function method
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Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes
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Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
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Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate
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An explanation for invalidity of working currents' derating on improving light-emitting diode devices' reliability
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Quantitative Analysis of Initial Short-Term Aging Behavior and Its Implication for the Efficiency Droop in Blue Light-Emitting Diodes
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Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs
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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes
resolves10.1063/1.4816434
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
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Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
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Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes
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Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes
resolves10.1109/LED.2002.802601
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes
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Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy
resolves10.1063/1.1767280
Electrical characteristics of InGaN∕GaN light-emitting diodes grown on GaN and sapphire substrates
resolves10.1063/1.2906326
Tunneling entity in different injection regimes of InGaN light emitting diodes
resolves10.1002/pssa.200925596
Effect of deep‐level states on current–voltage characteristics and electroluminescence of blue and UV light‐emitting diodes
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The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes
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Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage
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Analysis of Current Components and Estimation of Internal Quantum Efficiency in Light-Emitting Diodes
resolves10.1109/TED.2013.2242470
Temperature Dependence of the Component Currents and Internal Quantum Efficiency in Blue Light-Emitting Diodes
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Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes
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Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
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A multidimensional laser simulator for edge-emitters including quantum carrier capture
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Carrier capture in InGaN/GaN quantum wells: Role of electron-electron scattering
resolves10.1103/PhysRevB.54.17730
Electron capture in quantum wells via scattering by electrons, holes, and optical phonons
resolves10.1109/JSTQE.2011.2116770
Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
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Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells
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Erratum: “Femtosecond studies of electron capture times in InGaN∕GaN multiple quantum wells” [Appl. Phys. Lett. 84, 3052 (2004)]
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Model for carrier capture time through phonon emission in InGaN/GaN quantum wells
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Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures
resolves10.1109/TED.2009.2034792
Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes
resolves10.1109/TED.2012.2186579
Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes
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InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers
resolves10.1109/LPT.2006.875063
High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD
resolves10.1016/j.microrel.2014.07.122
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms
resolves10.1016/j.microrel.2013.07.054
“Hot-plugging” of LED modules: Electrical characterization and device degradation
resolves10.1109/TED.2007.908900
Reversible Degradation of Ohmic Contacts on p-GaN for Application in High-Brightness LEDs
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Improved long-term thermal stability of InGaN∕GaN multiple quantum well light-emitting diodes using TiB2- and Ir-based p-Ohmic contacts
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Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress
resolves10.1109/LED.2016.2543805
Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes
resolves10.1063/1.116936
AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
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Electromigration-induced failure of GaNmulti-quantum well light emitting diode
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Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes
resolves10.1002/pssa.200565316
Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
resolves10.1109/JQE.2012.2203795
Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes
resolves10.1016/j.microrel.2014.07.073
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
resolves10.1002/pssa.201431714
Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes
resolves10.1109/TNANO.2016.2520833
Nanoscale Investigation of Degradation and Wavelength Fluctuations in InGaN-Based Green Laser Diodes
resolves10.1063/1.1795351
Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
resolves10.1016/j.microrel.2016.07.118
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes
resolves10.1063/1.1901836
Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency
resolves10.1109/LPT.2007.908659
Gradient Doping of Mg in p-Type GaN for High Efficiency InGaN–GaN Ultraviolet Light-Emitting Diode
resolves10.1016/j.microrel.2016.07.131
Degradation of InGaN-based LEDs related to charge diffusion and build-up
resolves10.1063/1.329845
Method for determining effective nonradiative lifetime and leakage losses in double-heterostructure lasers
resolves10.1143/JJAP.28.L2112
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
resolves10.1063/1.117045
Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor deposition
resolves10.1063/1.4712030
Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure
resolves10.1016/j.microrel.2013.07.053
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes
resolves10.1063/1.360405
Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
resolves10.1088/0953-8984/14/13/307
Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs)
resolves10.1103/PhysRevLett.110.177406
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
resolves10.1002/1521-396X(200212)194:2<419::AID-PSSA419>3.0.CO;2-B
Degradation Analysis of InGaN Laser Diodes
resolves10.1002/1521-3951(200212)234:3<755::AID-PSSB755>3.0.CO;2-0
Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells
resolves10.1088/0953-8984/27/26/265802
Observations of exciton–surface plasmon polariton coupling and exciton–phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films
resolves10.1002/1521-396X(200203)190:1<149::AID-PSSA149>3.0.CO;2-I
The Effects of Localization and of Electric Fields on LO-Phonon-Exciton Coupling in InGaN/GaN Quantum Wells and Quantum Boxes
resolves10.1063/1.1897070
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
resolves10.1063/1.3593964
Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodes
resolves10.1063/1.3626280
Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy
resolves10.1063/1.2908919
Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
The 21 references without a DOI — listed, not checked
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib2
no DOI — not checkedChallenges towards the simulation of GaN-based LEDs beyond the semiclassical framework
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib5
no DOI — not checkedElectron transport
no DOI — not checkedTrap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes
no DOI — not checkedTwo channels of non-radiative recombination in InGaN/GaN LEDs
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib34
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib35
no DOI — not checkedThe effect of carrier capture on the modulation bandwidth of quantum well lasers
no DOI — not checkedSimulation of carrier transport and nonlinearities in quantum-well laser diodes
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib40
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib41
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib42
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib43
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib49
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib51
no DOI — not checked10.1016/B978-0-08-101942-9.00014-9_bib52
no DOI — not checkedLife tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes
no DOI — not checkedTowards high reliability GaN LEDs: understanding the physical origin of gradual and catastrophic failure
no DOI — not checkedDegradation of blue AlGaN/InGaN/GaN LEDs subjected to high current pulses
no DOI — not checkedCharacteristics of GaN-based laser diodes for post-DVD applications
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