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Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum
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The 27 checked references that resolve
resolves10.1016/j.mejo.2007.04.011
Prospective development in diffusion barrier layers for copper metallization in LSI
resolves10.1007/s003390050539
Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance
resolves10.1063/1.369172
Barrier properties and failure mechanism of Ta–Si–N thin films for Cu interconnection
resolves10.1016/S0169-4332(03)00871-7
Characteristics of sputtered TaBx thin films as diffusion barriers between copper and silicon
resolves10.1063/1.1468904
Diffusion barrier properties of amorphous TiB2 for application in Cu metallization
resolves10.1149/1.1504457
Thermal Reactions of Cu/TiN/Ti/FSG and Cu/TiN/Ti/OSG Multilayers at Elevated Temperatures
resolves10.1016/S0254-0584(03)00106-8
Diffusion barrier properties of sputtered TaNx between Cu and Si using TaN as the target
resolves10.1116/1.1776182
Effects of substrate bias and nitrogen flow ratio on the resistivity, density, stoichiometry, and crystal structure of reactively sputtered ZrNx thin films
resolves10.1063/1.373566
Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration
resolves10.1016/S0040-6090(02)00163-3
Transparent and conducting ITO films: new developments and applications
resolves10.1016/S0040-6090(97)00526-9
Electrical, optical and structural characteristics of indium-tin-oxide thin films deposited on glass and polymer substrates
resolves10.1016/S0040-6090(96)08865-7
Preparation and piezoresistive properties of reactively sputtered indium tin oxide thin films
resolves10.1016/j.tsf.2006.04.042
Effect of tin-doped indium oxide film thickness on the diffusion barrier between silicon and copper
resolves10.1016/j.apsusc.2006.12.075
Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide
resolves10.1016/j.vacuum.2004.01.081
Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering
resolves10.1111/j.1151-2916.1994.tb05376.x
Sintering and Electrical Properties of Titania‐ and Zirconia‐Containing ln
<sub>2</sub>
O
<sub>3</sub>
‐Sno
<sub>2</sub>
(ITO) Ceramics
The 3 references without a DOI — listed, not checked
no DOI — not checked10.1016/j.apsusc.2009.04.001_bib1
no DOI — not checked10.1016/j.apsusc.2009.04.001_bib3
no DOI — not checked10.1016/j.apsusc.2009.04.001_bib20
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