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Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

https://doi.org/10.1016/j.apsusc.2010.11.179

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Geometrical structure of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:mfrac><mml:mo>−</mml:mo><mml:mi mathvariant="normal">M</mml:mi><mml:mi mathvariant="normal">L</mml:mi></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn/><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:mfrac><mml:mo>−</mml:mo><mml:mi mathvariant="normal">M</mml:mi><mml:mi mathvariant="normal">L</mml:mi></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>(</mml:mo><mml:mn>2</mml:mn><mml:mn/><mml:mo>×</mml:mo><mml:mn>3</mml:mn><mml:mo>)</mml:mo></mml:math>Ba/Si(001) interfaces

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High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of Gold

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Chemical bonding and structure of the sulfur treated GaAs(111)B surface

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(NH4)2S Passivation of High-k/In0.53Ga0.47As Interfaces: A Systematic Study of (NH4)2S Concentration

The 6 references without a DOI — listed, not checked

no DOI — not checkedhttp://www.itrs.net/Links/2009ITRS/2009Chapters_2009Tables/2009_ExecSum.pdf, p. 17.

no DOI — not checked10.1016/j.apsusc.2010.11.179_bib0015

no DOI — not checked10.1016/j.apsusc.2010.11.179_bib0030

no DOI — not checked10.1016/j.apsusc.2010.11.179_bib0275

no DOI — not checked10.1016/j.apsusc.2010.11.179_bib0285

no DOI — not checkedSupplied by Wafertech http://www.wafertech.co.uk/.

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