Reference health
Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
27/27 checkable references clean · checked 2026-07-24
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 27 checked references that resolve
resolves10.1038/nmat1284
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
resolves10.1143/JJAP.33.L743
Transparent and Conductive ZnO Thin Films Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Zinc Acetylacetonate
resolves10.1063/1.1534627
Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
resolves10.1149/2.092203jes
High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device
resolves10.1063/1.2834852
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
resolves10.1063/1.1940727
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
resolves10.1063/1.4774400
Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
resolves10.1021/am300458q
Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-Atomic Layer Deposition
resolves10.1088/0268-1242/26/8/085013
Electrical parameters of ZnO films and ZnO-based junctions obtained by atomic layer deposition
resolves10.1021/cm1020959
Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches
resolves10.1116/1.3609974
Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
resolves10.1016/j.apsusc.2010.11.138
The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD
resolves10.1002/adfm.201001342
Structural and Electrical Properties of Atomic Layer Deposited Al‐Doped ZnO Films
resolves10.1016/S0040-6090(01)01363-3
Photoluminescence and structure of ZnO films deposited on Si substrates by metal-organic chemical vapor deposition
resolves10.1088/0957-4484/22/25/254029
Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO<sub>2</sub>, NiO and Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub>
resolves10.1002/adma.201004306
High‐Performance Programmable Memory Devices Based on Co‐Doped BaTiO<sub>3</sub>
resolves10.1038/nnano.2009.456
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
The 3 references without a DOI — listed, not checked
no DOI — not checked10.1016/j.apsusc.2013.05.141_bib0015
no DOI — not checked10.1016/j.apsusc.2013.05.141_bib0050
no DOI — not checked10.1016/j.apsusc.2013.05.141_bib0140
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