Reference health
Very low-temperature growth of few-layer graphene by Ni-induced crystallization of amorphous carbon in vacuum
44/44 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
4 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 44 checked references that resolve
resolves10.1021/jz1011466
Comparison of Graphene Growth on Single-Crystalline and Polycrystalline Ni by Chemical Vapor Deposition
resolves10.1002/smll.201403463
Ultrafast Graphene Growth on Insulators via Metal-Catalyzed Crystallization by a Laser Irradiation Process: From Laser Selection, Thickness Control to Direct Patterned Graphene Utilizing Controlled Layer Segregation Process
resolves10.1039/C4NR00495G
Direct assessment of the mechanical modulus of graphene co-doped with low concentrations of boron–nitrogen by a non-contact approach
resolves10.1039/c2nr33294a
Synthesis of a CdSe–graphene hybrid composed of CdSe quantum dot arrays directly grown on CVD-graphene and its ultrafast carrier dynamics
resolves10.1016/j.carbon.2014.10.069
Direct synthesis of few- and multi-layer graphene films on dielectric substrates by “etching-precipitation” method
resolves10.1021/jp040650f
Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
resolves10.1021/nl201362n
Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition
resolves10.1063/1.4914114
Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition
resolves10.1063/1.3397985
<i>In situ</i> x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers
resolves10.1039/C5NR08614K
An
<i>ab initio</i>
study of the nickel-catalyzed transformation of amorphous carbon into graphene in rapid thermal processing
resolves10.1209/0295-5075/96/46003
On the mechanisms of precipitation of graphene on nickel thin films
resolves10.1021/nn302290z
Direct Growth of Doping-Density-Controlled Hexagonal Graphene on SiO<sub>2</sub> Substrate by Rapid-Heating Plasma CVD
resolves10.1063/1.4974318
Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon
resolves10.7567/JJAP.53.04EB05
Intercalated multilayer graphene wires and metal/multilayer graphene hybrid wires obtained by annealing sputtered amorphous carbon
resolves10.1021/acsomega.9b01708
Impact of Amorphous-C/Ni Multilayers on Ni-Induced Layer Exchange for Multilayer Graphene on Insulators
resolves10.1038/srep17955
Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure
resolves10.1016/j.apsusc.2011.06.017
Surface refinement and electronic properties of graphene layers grown on copper substrate: An XPS, UPS and EELS study
resolves10.1038/s41598-018-19411-0
Effects of graphene intercalation on dielectric reliability of HfO2 and modulation of effective work function for Ni/Gr/c-HfO2 interfaces: first-principles study
resolves10.1016/j.carbon.2009.12.057
Quantifying ion-induced defects and Raman relaxation length in graphene
resolves10.1103/PhysRevLett.115.016102
Observation and Origin of Extraordinary Atomic Mobility at Metal-Semiconductor Interfaces at Low Temperatures
resolves10.1002/adem.200800340
Fundamentals of Metal‐induced Crystallization of Amorphous Semiconductors
resolves10.1016/j.actamat.2014.03.050
Al-induced crystallization of amorphous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si62.gif" overflow="scroll"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Si</mml:mtext></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Ge</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>-</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>(0<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si63.gif" overflow="scroll"><mml:mrow><mml:mo>⩽</mml:mo></mml:mrow></mml:math>x<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si64.gif" overflow="scroll"><mml:mrow><mml:mo>⩽</mml:mo></mml:mrow></mml:math>1): Diffusion, phase development and layer exchange
resolves10.1063/1.2172707
Wetting and crystallization at grain boundaries: Origin of aluminum-induced crystallization of amorphous silicon
resolves10.1002/adma.201002997
Metal‐Catalyzed Growth of Semiconductor Nanostructures Without Solubility and Diffusivity Constraints
resolves10.1063/1.2374849
Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate
resolves10.1088/1361-6528/ab2616
Beyond dealloying: development of nanoporous gold via metal-induced crystallization and its electrochemical properties
resolves10.1063/1.1659976
Bulk Diffusion of Carbon-14 through Polycrystalline Nickel Foil between 350 and 700°C
resolves10.3139/146.110204
Thermodynamics of reactions and phase transformations at interfaces and surfaces
resolves10.1016/j.carbon.2005.07.036
Density functional study of graphite bulk and surface properties
resolves10.1016/j.cplett.2012.04.048
Interaction between graphene and nickel(1 1 1) surfaces with commensurate and incommensurate orientational relationships
resolves10.1016/0039-6028(93)90657-6
Electron microscopy study of the interaction of Ni, Pd and Pt with carbon
resolves10.1016/0378-5963(78)90007-7
A combined SIMS-AES/LEED study of the room-temperature oxidation of Ni(110) and Ni(111) surfaces
The 4 references without a DOI — listed, not checked
no DOI — not checkedMetal-catalyzed graphitization in Ni-C alloys and amorphous-C/Ni bilayers
no DOI — not checked10.1016/j.carbon.2019.12.017_bib29
no DOI — not checked10.1016/j.carbon.2019.12.017_bib33
no DOI — not checked10.1016/j.carbon.2019.12.017_bib48
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