Reference health
Surface zeta potential and diamond growth on gallium oxide single crystal
80/80 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
7 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 80 checked references that resolve
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Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
resolves10.1186/s11671-018-2712-1
An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
resolves10.1016/j.tsf.2005.08.230
Fabrication of hexagonal GaN on the surface of β-Ga2O3 single crystal by nitridation with NH3
resolves10.1149/2.0021702jss
Scaling-Up of Bulk β-Ga<sub>2</sub>O<sub>3</sub>Single Crystals by the Czochralski Method
resolves10.1016/j.jcrysgro.2016.04.022
Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air
resolves10.7567/JJAP.55.1202BF
Defect characterization of β-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by vertical Bridgman method
resolves10.1143/JJAP.47.8506
Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method
resolves10.7567/JJAP.55.1202A2
High-quality β-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by edge-defined film-fed growth
resolves10.1063/1.3674287
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
resolves10.1063/1.4821858
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
resolves10.1063/1.4967931
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage
resolves10.1109/LED.2016.2568139
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub>MOSFETs
resolves10.1109/LED.2015.2512279
Field-Plated Ga<sub>2</sub>O<sub>3</sub>MOSFETs With a Breakdown Voltage of Over 750 V
resolves10.1063/1.4979789
High pulsed current density <i>β</i>-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
resolves10.1063/1.5000735
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
resolves10.1109/JEDS.2019.2933369
High Performance ${\beta}$ -Ga<sub>2</sub>O<sub>3</sub> Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate
resolves10.1149/2162-8777/ab89b8
Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga<sub>2</sub>O<sub>3</sub> for a Solar-Blind Photodiode
resolves10.1016/j.microrel.2015.09.025
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing
resolves10.1063/1.5089559
Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces
resolves10.1063/5.0002068
Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions
resolves10.1038/srep44462
Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers
resolves10.1080/14686996.2017.1366815
Effect of slurry composition on the chemical mechanical polishing of thin diamond films
resolves10.1016/j.carbon.2017.12.077
Redox agent enhanced chemical mechanical polishing of thin film diamond
resolves10.1021/acsami.9b13869
Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance
resolves10.1063/1.5108790
Hydrogen plasma treatment of <b>
<i>β</i>
</b>-Ga2O3: Changes in electrical properties and deep trap spectra
resolves10.1016/0021-9797(80)90374-4
Flat plate streaming potential investigations: Hydrodynamics and electrokinetic equivalency
resolves10.1016/0142-9612(83)90032-7
Electrokinetic properties of polymer and glass surfaces in aqueous solutions: Experimental evidence for swollen surface layers
resolves10.1016/0021-9797(90)90454-V
Streaming potential measurements as a tool to study protein adsorption kinetics
resolves10.1038/s41598-019-39707-z
Superconducting Diamond on Silicon Nitride for Device Applications
resolves10.1039/C9NR02729G
Superconducting boron doped nanocrystalline diamond on boron nitride ceramics
resolves10.1021/acsanm.1c00439
Electropositive Nanodiamond-Coated Quartz Microfiber Membranes for Virus and Dye Filtration
resolves10.1116/1.2753846
Deposition of TiN and HfO2 in a commercial 200mm remote plasma atomic layer deposition reactor
resolves10.1016/S0925-9635(96)00674-7
Measurement and calculation of the thermal expansion coefficient of diamond
resolves10.1063/1.5054265
Thermal expansion of single-crystalline <i>β</i>-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffraction
resolves10.1039/C6RA27508G
The role of interactions between abrasive particles and the substrate surface in chemical-mechanical planarization of Si-face 6H-SiC
resolves10.1081/SS-120003055
Fluoride adsorption onto α-Al<sub>2</sub>O<sub>3</sub>and its effect on the zeta potential at the alumina–aqueous electrolyte interface
resolves10.1116/1.581326
Comparison of plasma chemistries for dry etching thin film electroluminescent display materials
resolves10.1063/1.110213
SiO2 mask erosion and sidewall composition during CH4/H2 reactive ion etching of InGaAsP/InP
resolves10.1016/0022-4596(82)90274-2
Raman spectra and valence force field of single-crystalline β Ga2O3
resolves10.1002/sia.6577
Rapid evaluation of the Voigt function and its use for interpreting X‐ray photoelectron spectroscopic data
resolves10.1016/j.matdes.2016.09.092
A Raman spectroscopy study of the effect of thermal treatment on structural and photoluminescence properties of CVD diamond films
resolves10.1103/PhysRevB.64.075414
Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon
resolves10.1098/rsta.2004.1452
Raman spectroscopy of amorphous, nanostructured, diamond–like carbon, and nanodiamond
resolves10.1103/PhysRevB.48.2601
Quantitative measurement of residual biaxial stress by Raman spectroscopy in diamond grown on a Ti alloy by chemical vapor deposition
resolves10.1515/msp-2015-0064
Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy
resolves10.1063/1.2798940
Stresses in textured and polycrystalline cubic films by Raman spectroscopy: Application to diamond
resolves10.1063/1.101951
Characterization of crystalline quality of diamond films by Raman spectroscopy
resolves10.1063/1.104316
Study of crystallographic orientations in the diamond film on the (100) surface of cubic boron nitride using a Raman microprobe
resolves10.1016/j.carbon.2020.11.067
Thermal stress modelling of diamond on GaN/III-Nitride membranes
The 7 references without a DOI — listed, not checked
no DOI — not checkedPhysical limitations on frequency and power parameters of transistors
no DOI — not checkedUltrawide-bandgap semiconductors: Research opportunities and challenges
no DOI — not checkedReliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications
no DOI — not checkedIn situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
no DOI — not checked785 nm Raman spectroscopy of CVD diamond films
no DOI — not checkedRelation of Raman effect to crystal structure
no DOI — not checkedOrigin of the 1150 cm -1 Raman mode in nanocrystalline diamond
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