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Growth of high-quality Ga–F codoped ZnO thin films by mid-frequency sputtering

https://doi.org/10.1016/j.ceramint.2013.05.125
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

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The 25 checked references that resolve
resolves10.1088/0022-3727/33/4/201
Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties
resolves10.1149/1.3554730
Transparent Conducting Ti-Doped ZnO Thin Films Applied to Organic Light-Emitting Diodes
resolves10.1016/j.tsf.2010.03.087
Influence of post-annealing temperature on the properties exhibited by nanostructured In doped ZnO thin films
resolves10.1016/j.actamat.2011.07.068
Synthesis of fluorine doped zinc oxide by reactive magnetron sputtering
resolves10.1063/1.4709753
Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films
resolves10.1016/j.tsf.2009.03.197
Elaboration and characterization of Co doped, conductive ZnO thin films deposited by radio-frequency magnetron sputtering at room temperature
resolves10.1016/j.apsusc.2008.09.012
Structural, electrical and optical properties of Al–Ti codoped ZnO (ZATO) thin films prepared by RF magnetron sputtering
resolves10.1016/j.apsusc.2007.06.028
Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders
resolves10.1016/j.jeurceramsoc.2005.03.023
Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter
resolves10.1016/j.ceramint.2011.08.007
Investigation of AlF3 doped ZnO thin films prepared by RF magnetron sputtering
resolves10.1016/j.tsf.2011.10.037
Structural, electrical and moisture resistance properties of Ga-doped ZnO films
resolves10.1016/j.ceramint.2012.07.037
Room temperature preparation of high performance AZO films by MF sputtering
resolves10.1063/1.366798
Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties
resolves10.1016/j.solmat.2010.02.026
Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates
resolves10.1016/j.matlet.2009.08.027
Stress and structural studies of ZnO thin films on polymer substrate under different RF powered conditions
resolves10.1016/j.solmat.2009.08.012
Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications
resolves10.1016/j.tsf.2010.06.063
Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties
resolves10.1016/j.apsusc.2011.04.138
The transparence comparison of Ga- and Al-doped ZnO thin films
resolves10.1016/j.solmat.2011.04.001
High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (100) by RF magnetron sputtering
resolves10.1016/j.jallcom.2010.09.047
Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure
resolves10.1016/j.jcrysgro.2005.10.047
Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films
resolves10.1016/j.ceramint.2011.03.042
Effects of pre-strain applied at a polyethylene terephthalate substrate before the coating of Al-doped ZnO film on film quality and optical and electrical properties
resolves10.1016/j.tsf.2008.05.009
ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells
resolves10.1063/1.1884256
F-doping effects on electrical and optical properties of ZnO nanocrystalline films
resolves10.1016/j.jallcom.2009.05.116
Effect of stress on optical band gap of ZnO thin films with substrate temperature by spray pyrolysis
The 2 references without a DOI — listed, not checked
no DOI — not checkedPhysical and sensing properties of ZnO:F:Al thin films deposited by sol–gel
no DOI — not checkedLow-resistivity ZnO:F:Al transparent thin films
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