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Grain-growth-induced high electrical conductivity in SiC–BN composites

https://doi.org/10.1016/j.ceramint.2018.06.049
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 45 checked references that resolve
resolves10.1126/science.263.5150.1114
Making Ceramics "Ductile"
resolves10.1016/j.jeurceramsoc.2004.01.026
Nano- versus macro-hardness of liquid phase sintered SiC
resolves10.1111/j.1551-2916.2006.01421.x
Sliding‐Wear‐Resistant Liquid‐Phase‐Sintered SiC Processed Using α‐SiC Starting Powders
resolves10.1016/j.actamat.2010.01.031
Atomic-scale imaging and the effect of yttrium on the fracture toughness of silicon carbide ceramics
resolves10.1016/j.jeurceramsoc.2013.08.024
Electrochemical corrosion of silicon carbide ceramics in H2SO4
resolves10.1111/jace.14748
High thermal conductivity of spark plasma sintered silicon carbide ceramics with yttria and scandia
resolves10.1016/j.ijrmhm.2017.07.014
Effect of impingement angle and WC content on high temperature erosion behavior of SiC-WC composites
resolves10.1109/TED.2008.926650
Characterization, Modeling, and Application of 10-kV SiC MOSFET
resolves10.1007/s11664-003-0173-4
High-purity semi-insulating 4H-SiC for microwave device applications
resolves10.1016/0921-5107(94)04009-S
Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivation
resolves10.1016/0921-4526(93)90278-E
6H-silicon carbide devices and applications
resolves10.1109/TADVP.2007.898628
High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment
resolves10.1063/1.365578
Relativistic band structure calculation of cubic and hexagonal SiC polytypes
resolves10.1016/j.jeurceramsoc.2013.11.001
Highly conductive SiC ceramics containing Ti2CN
resolves10.1016/j.jeurceramsoc.2016.11.007
TiN modified SiC with enhanced strength and electrical properties
resolves10.1016/j.jeurceramsoc.2016.06.040
Electrically conductive SiC-BN composites
resolves10.1016/j.jeurceramsoc.2012.02.049
Electrically conductive silicon carbide with the addition of TiNbC
resolves10.1016/j.jeurceramsoc.2016.09.001
Electrical and thermal properties of SiC-Zr 2 CN composites sintered with Y 2 O 3 -Sc 2 O 3 additives
resolves10.1016/j.jeurceramsoc.2015.08.006
Effect of grain growth on electrical properties of silicon carbide ceramics sintered with gadolinia and yttria
resolves10.1111/j.1151-2916.2001.tb01033.x
Thermal and Electrical Properties in Plasma‐Activation‐Sintered Silicon Carbide with Rare‐Earth‐Oxide Additives
resolves10.1016/j.jeurceramsoc.2014.01.004
Electrical resistivity of α-SiC ceramics sintered with Al2O3 or AlN additives
resolves10.1016/j.jeurceramsoc.2014.08.011
Electrical, thermal and mechanical properties of silicon carbide–silicon nitride composites sintered with yttria and scandia
resolves10.1016/j.jeurceramsoc.2015.04.010
Electrical and thermal properties of SiC–AlN ceramics without sintering additives
resolves10.1016/S0040-6090(00)00768-9
Characterization of elastic properties of hard carbon and boron nitride films using the Brillouin light scattering technique
resolves10.1111/j.1151-2916.1975.tb18990.x
Effect of Boron and Carbon on Sintering of SIC
resolves10.1016/j.jeurceramsoc.2015.08.011
Electrical and thermal properties of silicon carbide–boron nitride composites prepared without sintering additives
resolves10.1111/j.1151-2916.1999.tb02149.x
Fine‐Grained Silicon Carbide Ceramics with Oxynitride Glass
resolves10.1016/j.jeurceramsoc.2012.07.001
Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere
resolves10.1023/A:1004552704872
Influence of the α/β-SiC phase transformation on microstructural development and mechanical properties of liquid phase sintered silicon carbide
resolves10.1111/j.1151-2916.1981.tb15906.x
The 6 <i>H</i> → 3 <i>C</i> “Reverse” Transformation in Silicon Carbide Compacts
resolves10.1111/jace.12351
Temperature Dependence of Electrical Resistivity (4–300 K) in Aluminum‐ and Boron‐Doped <scp> <scp>SiC</scp> </scp> Ceramics
resolves10.1111/j.1151-2916.1999.tb02026.x
Low‐Temperature Pressureless Sintering of alpha‐SiC with Al <sub>4</sub> C <sub>3</sub> ‐B <sub>4</sub> C‐C Additions
resolves10.1111/j.1151-2916.1988.tb06417.x
Mechanism of Grain Growth and α‐β’Transformation During Liquid‐Phase Sintering of β′‐Sialon
resolves10.1103/PhysRevB.22.2842
Site effect on the impurity levels in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mi>R</mml:mi></mml:math>SiC
resolves10.1038/nmat1134
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
resolves10.1016/j.jeurceramsoc.2012.11.024
Correlation between microstructure and electrical resistivity of hexagonal boron nitride ceramics
resolves10.1016/j.scriptamat.2013.08.016
High electrical resistivity of pressureless sintered in situ SiC–BN composites
resolves10.1111/jace.13376
Microstructure, Thermal Conductivity, and Electrical Properties of <i>In Situ</i> Pressureless Densified SiC–BN Composites
resolves10.1016/j.jeurceramsoc.2014.11.016
Enhanced electrical resistivity in SiC–BN composites with highly-active BN nanoparticles synthesized via chemical route
resolves10.1007/BF00353168
Phonon scattering and thermal conduction mechanisms of sintered aluminium nitride ceramics
resolves10.1002/pen.760160905
Methods for predicting the thermal conductivity of composite systems: A review
resolves10.1002/app.1970.070140604
Dynamic mechanical properties of particulate‐filled composites
resolves10.1016/j.scriptamat.2016.07.011
Thermal conductivity of hot-pressed hexagonal boron nitride
resolves10.1016/S0925-9635(00)00375-7
Group III–V impurities in β-SiC: lattice distortions and solubility
resolves10.1111/jace.13311
Thermal and Mechanical Properties of SiC–TiC <sub>0.5</sub> N <sub>0.5</sub> Composites
The 3 references without a DOI — listed, not checked
no DOI — not checkedNIST Property Data Summaries, Sintered Silicon Carbide (SiC) 〈http://www.ceramics.nist.gov/srd/summary/scdscs.htm〉 (Accessed 07 May 2018).
no DOI — not checkedA review of models for effective thermal conductivity of composite materials
no DOI — not checked10.1016/j.ceramint.2018.06.049_bib45
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