Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 39 checked references that resolve
resolves10.1103/PhysRevB.90.125304Tunable magnetic properties of transition metal doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoS</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevB.87.155304Quasiparticle band structures and optical properties of strained monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>and WS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1021/nl402150rLow-Frequency Electronic Noise in Single-Layer MoS<sub>2</sub> Transistors
resolves10.1021/nn203715cIntegrated Circuits and Logic Operations Based on Single-Layer MoS<sub>2</sub>
resolves10.1103/PhysRevB.93.085309Valence and conduction band structure of the quasi-two-dimensional semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Sn</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1039/c4cp00487fTheoretical study of thermoelectric properties of few-layer MoS2 and WSe2
resolves10.1021/nn504481rTin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
resolves10.1016/j.apsusc.2013.02.034Divacancy-assisted transition metal adsorption on the BN graphene and its interaction with hydrogen molecules: a theoretical study
resolves10.1021/jp075602kEffect of Surface Oxygen Vacancy on Pt Cluster Adsorption and Growth on the Defective Anatase TiO<sub>2</sub>(101) Surface
resolves10.1021/nn500064sEmerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
resolves10.1103/PhysRevB.87.195201Mn-doped monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>: An atomically thin dilute magnetic semiconductor
resolves10.1038/srep03987First Principles Prediction of the Magnetic Properties of Fe-X6 (X = S, C, N, O, F) Doped Monolayer MoS2
resolves10.1063/1.4961468Ab initio study of electronic and magnetic properties in Ni-doped WS2 monolayer
resolves10.1039/C7RA12058CBand gap engineering of SnS
<sub>2</sub>
nanosheets by anion–anion codoping for visible-light photocatalysis
resolves10.1039/C4CP02214AThe characteristics of n- and p-type dopants in SnS
<sub>2</sub>
monolayer nanosheets
resolves10.1039/C6CP00039HInsight into the band structure engineering of single-layer SnS
<sub>2</sub>
with in-plane biaxial strain
resolves10.1021/nn303198wTensile Strain Switched Ferromagnetism in Layered NbS<sub>2</sub> and NbSe<sub>2</sub>
resolves10.1103/PhysRevB.88.205305Strong ferromagnetism in hydrogenated monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>tuned by strain
resolves10.1021/jp501734sTuning Electronic and Magnetic Properties of Early Transition-Metal Dichalcogenides via Tensile Strain
resolves10.1039/C5RA20980CElectronic structure and optical properties of Fe-doped SnS
<sub>2</sub>
from first-principle calculations
resolves10.1021/acsnano.5b03295Pressure-Modulated Conductivity, Carrier Density, and Mobility of Multilayered Tungsten Disulfide
resolves10.1007/s10948-017-4310-3Magnetic Properties in Nonmagnetic Metal Atom Adsorption on SiC Monolayer: First-Principles Study
resolves10.1063/1.5004467Magnetic coupling in nonmagnetic metal adsorption on arsenene monolayer: Ab initio study
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