Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 59 checked references that resolve
resolves10.1038/nmat1136Stacking fault energies and slip in nanocrystalline metals
resolves10.1063/1.2387133Generalized planar fault energies and twinning in Cu–Al alloys
resolves10.1088/0953-8984/24/15/155402Temperature-dependent ideal strength and stacking fault energy of fcc Ni: a first-principles study of shear deformation
resolves10.1063/1.2051793Generalized stacking fault energies, ductilities, and twinnabilities of Ni and selected Ni alloys
resolves10.1016/j.jallcom.2016.01.106Structural stability, mechanical properties and stacking fault energies of TiAl3 alloyed with Zn, Cu, Ag: First-principles study
resolves10.1103/PhysRevB.58.2487Peierls barriers and stresses for edge dislocations in Pd and Al calculated from first principles
resolves10.1103/PhysRevB.76.214102Cu-precipitation kinetics in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>α</mml:mi><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow></mml:math>from atomistic simulations: Vacancy-trapping effects and Cu-cluster mobility
resolves10.1002/adem.201200060Grain Boundary Segregation in UFG Alloys Processed by Severe Plastic Deformation
resolves10.1016/j.msea.2015.01.057Deformation of an Al–7Mg alloy with extensive structural micro-segregations during dynamic plastic deformation
resolves10.1016/0927-0256(96)00008-0Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
resolves10.1103/PhysRevB.54.11169Efficient iterative schemes for<i>ab initio</i>total-energy calculations using a plane-wave basis set
resolves10.1038/srep10213Generalized-stacking-fault energy and twin-boundary energy of hexagonal close-packed Au: A first-principles calculation
resolves10.1080/14786435.2014.890756Effect of temperature-induced solute distribution on stacking fault energy in Mg–X(X = Li, Cu, Zn, Al, Y and Zr) solid solution: a first-principles study
resolves10.1016/j.actamat.2006.03.043The vacancy–edge dislocation interaction in fcc metals: A comparison between atomic simulations and elasticity theory
resolves10.1016/j.msea.2013.12.103Achieve high ductility and strength in an Al–Mg alloy by severe plastic deformation combined with inter-pass annealing
resolves10.1016/j.actamat.2014.10.025Microstructure evolution and mechanical behavior of a binary Al–7Mg alloy processed by equal-channel angular pressing
resolves10.1103/PhysRevB.79.224103Shear deformation, ideal strength, and stacking fault formation of fcc metals: A density-functional study of Al and Cu
resolves10.1007/BF01154960The high-temperature creep behaviour of an Al-1 wt% Cu solid-solution alloy
resolves10.1016/j.scriptamat.2015.04.018High ductility bulk nanostructured Al–Mg binary alloy processed by equal channel angular pressing and inter-pass annealing
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