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Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device

https://doi.org/10.1016/j.jallcom.2019.153603
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47/47 checkable references clean · checked 2026-07-24

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

11 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 47 checked references that resolve
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The 11 references without a DOI — listed, not checked
no DOI — not checkedHybrid aluminum and indium conducting filaments for nonpolar resistive switching of Al/AlOx/indium tin oxide flexible device
no DOI — not checkedBipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating
no DOI — not checkedImpact of ultrathin Al2O3 interlayers on resistive switching in TiOx thin films deposited by atomic layer deposition
no DOI — not checkedScaling effect of device area and film thickness on electrical and reliability characteristics of RRAM
no DOI — not checked10.1016/j.jallcom.2019.153603_bib35
no DOI — not checkedResistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure
no DOI — not checkedBipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
no DOI — not checkedConduction mechanism of valence change resistive switching memory: a survey
no DOI — not checkedGraphene/h-BN heterostructures for vertical architecture of RRAM design
no DOI — not checkedResistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
no DOI — not checked10.1016/j.jallcom.2019.153603_bib57
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