Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 37 checked references that resolve
resolves10.1038/s41598-018-32641-6High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory
resolves10.1038/nmat5028Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
resolves10.1038/srep31323Controlled creation and displacement of charged domain walls in ferroelectric thin films
resolves10.1038/nmat3249Anisotropic conductance at improper ferroelectric domain walls
resolves10.1038/nnano.2015.114Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
resolves10.1103/PhysRevLett.109.047601Evidence of Sharp and Diffuse Domain Walls in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>by Means of Unit-Cell-Wise Strain and Polarization Maps Obtained with High Resolution Scanning Transmission Electron Microscopy
resolves10.1038/nmat4878Functional electronic inversion layers at ferroelectric domain walls
resolves10.1587/elex.7.817120-Gb/s NRZ-DQPSK signal generation by a thin-lithium-niobate-substrate modulator
resolves10.1364/OE.25.006963Second harmonic generation in nano-structured thin-film lithium niobate waveguides
resolves10.1063/1.4978857Domain-wall conduction in AFM-written domain patterns in ion-sliced LiNbO3 films
resolves10.1002/adma.201902890Electrical Tunability of Domain Wall Conductivity in LiNbO<sub>3</sub> Thin Films
resolves10.1038/s41563-020-0702-zFerroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers
resolves10.1038/nmat4799Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects
resolves10.1021/nl104363xDynamic Conductivity of Ferroelectric Domain Walls in BiFeO<sub>3</sub>
resolves10.1063/1.4869851Persistent conductive footprints of 109° domain walls in bismuth ferrite films
resolves10.1063/1.121746Oxygen vacancy mobility determined from current measurements in thin Ba0.5Sr0.5TiO3 films
resolves10.1002/adfm.201801725Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO<sub>3</sub> Thin Films
resolves10.1021/acs.nanolett.8b02742Large Carrier Mobilities in ErMnO<sub>3</sub> Conducting Domain Walls Revealed by Quantitative Hall-Effect Measurements
resolves10.1002/adfm.201603489Direct Observation of Ferroelectric Domain Walls in LiNbO<sub>3</sub>: Wall‐Meanders, Kinks, and Local Electric Charges
resolves10.1103/PhysRevLett.96.187601Nanosecond Domain Wall Dynamics in Ferroelectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Pb</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mi>Zr</mml:mi><mml:mo>,</mml:mo><mml:mi>Ti</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Thin Films
resolves10.1103/PhysRev.95.690Domain Formation and Domain Wall Motions in Ferroelectric BaTi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Single Crystals
The 4 references without a DOI — listed, not checked
no DOI — not checked7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C
no DOI — not checkedPolarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
no DOI — not checkedOxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films
no DOI — not checkedTime-dependent conduction current in lithium niobate crystals with charged domain walls
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