Reference health

High temperature ferroelectric domain wall memory

https://doi.org/10.1016/j.jallcom.2020.158155
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37/37 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

4 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 37 checked references that resolve
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High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory
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Controlled creation and displacement of charged domain walls in ferroelectric thin films
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Conduction of Topologically Protected Charged Ferroelectric Domain Walls
resolves10.1038/nmat3249
Anisotropic conductance at improper ferroelectric domain walls
resolves10.1038/ncomms2839
Free-electron gas at charged domain walls in insulating BaTiO3
resolves10.1103/PhysRevB.86.104104
Ferroelectric charged domain walls in an applied electric field
resolves10.1038/nnano.2015.114
Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
resolves10.1038/nmat2373
Conduction at domain walls in oxide multiferroics
resolves10.1103/PhysRevLett.109.047601
Evidence of Sharp and Diffuse Domain Walls in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>by Means of Unit-Cell-Wise Strain and Polarization Maps Obtained with High Resolution Scanning Transmission Electron Microscopy
resolves10.1038/nmat4878
Functional electronic inversion layers at ferroelectric domain walls
resolves10.1126/sciadv.1700512
Nonvolatile ferroelectric domain wall memory
resolves10.1587/elex.7.817
120-Gb/s NRZ-DQPSK signal generation by a thin-lithium-niobate-substrate modulator
resolves10.1364/OE.25.006963
Second harmonic generation in nano-structured thin-film lithium niobate waveguides
resolves10.1063/1.4978857
Domain-wall conduction in AFM-written domain patterns in ion-sliced LiNbO3 films
resolves10.1002/adma.201902890
Electrical Tunability of Domain Wall Conductivity in LiNbO<sub>3</sub> Thin Films
resolves10.1002/adfm.202000109
Ferroelectric Domain Wall Memristor
resolves10.1021/acs.nanolett.0c01836
Low-Voltage Domain-Wall LiNbO<sub>3</sub> Memristors
resolves10.1038/s41563-020-0702-z
Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers
resolves10.1038/s41467-020-16623-9
Nonvolatile ferroelectric field-effect transistors
resolves10.1038/nmat4799
Domain-wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects
resolves10.1021/nl104363x
Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO<sub>3</sub>
resolves10.1063/1.4869851
Persistent conductive footprints of 109° domain walls in bismuth ferrite films
resolves10.1038/s41598-017-09703-2
Large and accessible conductivity of charged domain walls in lithium niobate
resolves10.1021/acsnano.7b01199
Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals
resolves10.1063/1.121746
Oxygen vacancy mobility determined from current measurements in thin Ba0.5Sr0.5TiO3 films
resolves10.1002/adfm.201801725
Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO<sub>3</sub> Thin Films
resolves10.1103/PhysRev.126.1989
Space-Charge-Limited Currents in Iodine Single Crystals
resolves10.1111/j.1151-2916.1991.tb07812.x
Bulk Conductivity and Defect Chemistry of Acceptor‐Doped Strontium Titanate in the Quenched State
resolves10.1021/acs.nanolett.8b02742
Large Carrier Mobilities in ErMnO<sub>3</sub> Conducting Domain Walls Revealed by Quantitative Hall-Effect Measurements
resolves10.1038/ncomms13764
Hall effect in charged conducting ferroelectric domain walls
resolves10.1002/adfm.201201174
Conducting Domain Walls in Lithium Niobate Single Crystals
resolves10.1002/adfm.201603489
Direct Observation of Ferroelectric Domain Walls in LiNbO<sub>3</sub>: Wall‐Meanders, Kinks, and Local Electric Charges
resolves10.1103/PhysRevLett.90.107601
Ferroelectric Domain Breakdown
resolves10.1126/science.1206980
Domain Dynamics During Ferroelectric Switching
resolves10.1103/PhysRevLett.96.187601
Nanosecond Domain Wall Dynamics in Ferroelectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Pb</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mi>Zr</mml:mi><mml:mo>,</mml:mo><mml:mi>Ti</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Thin Films
resolves10.1103/PhysRev.95.690
Domain Formation and Domain Wall Motions in Ferroelectric BaTi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Single Crystals
The 4 references without a DOI — listed, not checked
no DOI — not checked7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C
no DOI — not checkedPolarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
no DOI — not checkedOxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films
no DOI — not checkedTime-dependent conduction current in lithium niobate crystals with charged domain walls
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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