Reference health
Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP
11/11 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 11 checked references that resolve
resolves10.1109/JQE.2002.804297
A 12 × 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array
resolves10.1109/LPT.2002.804651
Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates
resolves10.1016/0038-1098(81)90401-4
Optical characterization of interface disorder in multi-quantum well structures
resolves10.1103/PhysRevB.39.7736
Optical investigation of the exciton transfer between growth islands of different well widths in GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As quantum wells
resolves10.1063/1.1588360
Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures
resolves10.1109/68.784238
Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz
resolves10.1063/1.1505987
Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions
resolves10.1109/16.974696
Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
resolves10.1116/1.584733
Application of reflection mass spectrometry to molecular-beam epitaxial growth of InAlAs and InGaAs
The 2 references without a DOI — listed, not checked
no DOI — not checkedX.G. Zheng, J.S. Hsu, J.B. Hurst, X. Li, S. Wang, X. Sun, A.L. Holmes Jr., J.C. Campbell, A.S. Huntington, L.A. Coldren, IEEE J. Quant. Electron. accepted for publication.
no DOI — not checked10.1016/j.jcrysgro.2004.04.041_BIB11
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