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Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition

https://doi.org/10.1016/j.jcrysgro.2005.06.060
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29/29 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 29 checked references that resolve
resolves10.1049/el:19971238
High <i>T</i> <sub>0</sub> (140 K) and low-thresholdlong-wavelength strainedquantum well lasers on InGaAs ternary substrates
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Long-wavelength strained quantum-well lasers oscillating up to 210/spl deg/C on InGaAs ternary substrates
resolves10.1088/0268-1242/12/12/001
High-mobility Si and Ge structures
resolves10.1016/0022-0248(94)90021-3
Czochralski growth of SitGe1-x single crystals
resolves10.1016/0022-0248(95)00186-7
Czochralski growth of Ge1 − xSix alloy crystals
resolves10.1016/S0022-0248(96)01102-5
Czochralski growth of Si- and Ge-rich SiGe single crystals
resolves10.1016/S0022-0248(97)00405-3
Czochralski growth of bulk crystals of Ge1-xSix alloys
resolves10.1016/S0022-0248(98)00992-0
Czochralski growth of GeSi bulk alloy crystals
resolves10.1007/s11664-004-0267-7
Bulk single crystal growth of silicon-germanium
resolves10.1016/S0022-0248(98)00410-2
Growth and characterization of Ge1−xSix (x⩽10at%) single crystals
resolves10.1016/S0022-0248(96)00399-5
Germanium-silicon single crystal growth using an encapsulant in a silica ampoule
resolves10.1016/S0022-0248(96)01103-7
Silicon-germanium bulk alloy growth by liquid encapsulated zone melting
resolves10.1007/BF02666602
Multicomponent zone melting growth of ternary InGaAs bulk crystal
resolves10.1016/S0022-0248(99)00270-5
Growth of Ge-rich Si Ge1− single crystal with uniform composition (x=0.02) on a compositionally graded crystal for use as GaAs solar cells
resolves10.1016/S0022-0248(98)00925-7
InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique
resolves10.1016/S0022-0248(99)00407-8
InGaAs single crystal with a uniform composition in the growth direction grown on an InGaAs seed using the multicomponent zone growth method
resolves10.1143/JJAP.43.L97
Improved Electrical Properties of InN by High-Temperature Annealing with<i>In Situ</i>Capped SiN<sub><i>x</i></sub>Layers
resolves10.1016/S0022-0248(01)02171-6
In-situ monitoring system of the position and temperature at the crystal–solution interface
resolves10.1143/JJAP.40.4141
Growth of Si<sub>x</sub>Ge<sub>1-x</sub> (x \fallingdotseq0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
resolves10.1016/S0022-0248(01)00974-5
Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal–melt interface using in situ monitoring system
resolves10.1016/S0921-5107(01)00775-9
Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures
resolves10.1016/S0022-0248(02)00940-5
Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals
resolves10.1016/S0022-0248(02)02400-4
Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal–melt interface position for precise control of the growth temperature
resolves10.1016/j.jcrysgro.2004.11.430
A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal
resolves10.1504/IJMPT.2005.005764
Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams
resolves10.1016/0022-0248(81)90331-6
Si-Ge solid solution single crystal growth by electron beam floating zone technique
resolves10.1016/0022-0248(95)00968-X
SixGe1 − x single crystals grown by the RF-heated float zone technique
resolves10.1016/S0022-0248(01)01394-X
Float zone growth and characterization of Ge1−xSix (x⩽10at%) single crystals
resolves10.1143/JJAP.35.5980
Growth and Characterization of Bulk Si–Ge Single Crystals
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