Reference health
Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics
13/13 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
9 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 13 checked references that resolve
resolves10.1103/PhysRev.109.1909
Semiconducting Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mg</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Si Single Crystals
resolves10.1103/PhysRev.109.1916
Semiconducting Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mg</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Ge Single Crystals
resolves10.1149/1.2425689
The Thermoelectric Properties of Mixed Crystals of Mg[sub 2]Ge[sub x]Si[sub 1−x]
resolves10.2320/matertrans1989.33.845
Preparation and Thermoelectric Properties of Mg<SUB>2</SUB>Si<SUB>1&minus;<I>x</I></SUB>Ge<I><SUB>x</SUB></I> (<I>x</I>=0.0&sim;0.4) Solid Solution Semiconductors
resolves10.2320/matertrans1989.33.851
Temperature Dependence of Thermoelectric Properties of Mg<SUB>2</SUB>Si<SUB>0.6</SUB>Ge<SUB>0.4</SUB>
resolves10.1103/PhysRevB.54.16965
Semiconducting<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mg</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Si thin films prepared by molecular-beam epitaxy
resolves10.1007/BF00367816
Electrocal, thermal, thermoelectric and related properties of magnesium silicide semiconductor prepared from rice husk
resolves10.1109/ICT.2005.1519896
Sticking-free growth of bulk Mg/sub 2/Si crystals by the vertical bridgman method and their thermoelectric properties
resolves10.1557/PROC-0886-F11-13
Thermoelectric properties of Mg<sub>2</sub>Si<sub>1−x</sub>C<sub>x</sub> crystals grown by the vertical Bridgman method
The 9 references without a DOI — listed, not checked
no DOI — not checked10.1016/j.jcrysgro.2006.10.270_bib1
no DOI — not checkedT. Kajikawa, K. Shida, S. Shiraishi, T. Ito, M. Ohmori, T. Hirai, in: Proceedings of the 17th International Conference on Thermoelectrics, IEEE, 1998, p. 362.
no DOI — not checked10.1016/j.jcrysgro.2006.10.270_bib9
no DOI — not checked10.1016/j.jcrysgro.2006.10.270_bib12
no DOI — not checkedS. Sakuragi, in: Proceedings of 19th European Photovoltaic Solar Energy Conference, 2004, p. 1201.
no DOI — not checkedT.B. Massalski, H. Okamoto, P.R. Subramanian, L. Kacpizak (Eds.), Binary Alloy Phase Diagrams, second ed., vol. 3. ASM International, Materials Park, OH, 1990, p. 2547.
no DOI — not checkedP. Villars, L.D. Calvert, Pearson's Handbook of Crystallographic Data for Intermetallic Phases, second ed., vol. 4, ASM International, Materials Park, OH, 1991, p. 4307.
no DOI — not checked10.1016/j.jcrysgro.2006.10.270_bib20_1
no DOI — not checked10.1016/j.jcrysgro.2006.10.270_bib20_2
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