Reference health
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
26/26 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
9 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 26 checked references that resolve
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Experimental electronic structure of In<sub>2</sub>O<sub>3</sub>and Ga<sub>2</sub>O<sub>3</sub>
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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub>MOSFETs
resolves10.1063/1.4967931
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) <i>β</i>-Ga2O3 substrate with high breakdown voltage
resolves10.1063/1.3574911
Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer
resolves10.1364/OE.23.013554
High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process
resolves10.1016/j.jfluchem.2011.06.044
Growth and characteristics of optical single crystals for UV/VUV applications
resolves10.1002/pssa.201532599
Mechanism of oxygen sensing on β‐Ga<sub>2</sub>O<sub>3</sub> single‐crystal sensors for high temperatures
resolves10.1109/TNS.2017.2698831
<inline-formula> <tex-math notation="LaTeX">$\beta$</tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub>Solid-State Devices for Fast Neutron Detection
resolves10.1063/1.2919728
Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
resolves10.1016/j.jcrysgro.2014.07.021
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
resolves10.1063/1.3674287
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
resolves10.1063/1.4906375
Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers
resolves10.1103/PhysRev.137.A865
Optical and Microwave Properties of Trivalent Chromium in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1002/pssc.201300241
Time‐resolved spectroscopy of luminescence in Cu‐ and Cr‐doped β‐Ga<sub>2</sub>O<sub>3</sub>
resolves10.1063/1.4729289
Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga2O3
resolves10.1063/1.3642962
Electrical properties of <i>β</i>-Ga2O3 single crystals grown by the Czochralski method
resolves10.1002/crat.201000341
Czochralski growth and characterization of β‐Ga<sub>2</sub>O<sub>3</sub> single crystals
resolves10.1016/0022-0248(87)90226-0
Effects of impurities and atmosphere on the growth of Cr-doped gadolinium scandium gallium garnet. I
resolves10.1016/0022-0248(87)90227-2
Effects of impurities and atmosphere on the growth of Cr-doped gadolinium scandium gallium garnet. II
resolves10.1016/j.jcrysgro.2011.04.033
On the effect of oxygen partial pressure on the chromium distribution coefficient in melt-grown ruby crystals
The 9 references without a DOI — listed, not checked
no DOI — not checked10.1016/j.jcrysgro.2018.01.022_b0015
no DOI — not checkedM. Higashiwaki, H. Murakami, Y. Kumagai, A. Kuramata; Jpn. J. Appl. Phys. 55 (2016) 1202A1
no DOI — not checkedState
no DOI — not checkedA. Kuramata, K. Koshi, S. Watanabe, Y. Yamaoka, T. Masui, S. Yamakoshi; Jpn. J. Appl. Phys. 55 (2016) 1202A2
no DOI — not checkedV.I. Vasil’tsiv, Y.M. Zakarko, Zhurnal Prikladnoi Spektroskopii 39 (1983) 423.
no DOI — not checkedwww.factsage.com.
no DOI — not checkedData base of Shannon ionic radii: <http://abulafia.mt.ic.ac.uk/shannon/ptable.php>.
no DOI — not checkedA. Fiedler, Z. Galazka, K. Irmscher, 2nd International Workshop on Gallium Oxide and Related Materials (IWGO-2017), 13–15 September 2017, Parma, Italy.
no DOI — not checkedW. Łachmański, W. Drozdowski, A. J. Wojtowicz, Z. Galazka, The Sixth International Workshop on Advanced Spectroscopy and Optical Materials (IWASOM 2017), 9–14 July 2017, Gdańsk Poland.
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