Reference health
Effect of grain growth on electrical properties of silicon carbide ceramics sintered with gadolinia and yttria
40/40 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 40 checked references that resolve
resolves10.1111/j.1551-2916.2007.01792.x
The AC Conductivity of Liquid‐Phase‐Sintered Silicon Carbide
resolves10.1016/j.jeurceramsoc.2006.05.053
Relationships between microstructure and electrical properties of liquid-phase sintered silicon carbide materials using impedance spectroscopy
resolves10.1016/j.actamat.2006.08.059
High-temperature strength of silicon carbide ceramics sintered with rare-earth oxide and aluminum nitride
resolves10.1016/j.jeurceramsoc.2012.02.049
Electrically conductive silicon carbide with the addition of TiNbC
resolves10.1016/j.jeurceramsoc.2012.04.041
High-temperature compressive creep of spark-plasma sintered additive-free polycrystalline β-SiC
resolves10.1016/j.jeurceramsoc.2011.10.052
A route for the pressureless liquid-phase sintering of SiC with low additive content for improved sliding-wear resistance
resolves10.1016/j.jeurceramsoc.2011.11.037
Fe doping and magnetic properties of zincblende SiC ceramics
resolves10.1016/j.jeurceramsoc.2011.08.002
Electrical resistivity of silicon nitride–silicon carbide based ternary composites
resolves10.4191/kcers.2013.50.6.372
Machinable SiC Ceramics with Addition of Al<sub>2</sub>TiO<sub>5</sub>
resolves10.1111/jace.12737
Microstructure and Thermal Conductivity of Silicon Carbide with Yttria and Scandia
resolves10.1111/jace.12810
Plasticity‐Controlled Friction and Wear in Nanocrystalline
<scp>
<scp>SiC</scp>
</scp>
resolves10.1016/j.jeurceramsoc.2013.08.024
Electrochemical corrosion of silicon carbide ceramics in H2SO4
resolves10.1016/0921-5107(94)04009-S
Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivation
resolves10.1007/s11664-003-0173-4
High-purity semi-insulating 4H-SiC for microwave device applications
resolves10.1063/1.365578
Relativistic band structure calculation of cubic and hexagonal SiC polytypes
resolves10.1111/j.1151-2916.2001.tb01033.x
Thermal and Electrical Properties in Plasma‐Activation‐Sintered Silicon Carbide with Rare‐Earth‐Oxide Additives
resolves10.1111/jace.12351
Temperature Dependence of Electrical Resistivity (4–300 K) in Aluminum‐ and Boron‐Doped
<scp>
<scp>SiC</scp>
</scp>
Ceramics
resolves10.1557/JMR.2003.0365
Interface characteristics affecting electrical properties of Y-doped SiC
resolves10.1016/S0955-2219(01)00178-9
Electrical and thermal conductivity of liquid phase sintered SiC
resolves10.1016/j.jeurceramsoc.2014.01.004
Electrical resistivity of α-SiC ceramics sintered with Al2O3 or AlN additives
resolves10.1016/j.jeurceramsoc.2014.08.025
High electrical resistivity of spark plasma sintered SiC ceramics with Al2O3 and Er2O3 as sintering additives
resolves10.1111/j.1151-2916.1987.tb04895.x
Effects of Elemental Additives on Electrical Resistivity of Silicon Carbide Ceramics
resolves10.1111/j.1551-2916.2011.04419.x
Electrodischarge‐Machinable Silicon Carbide Ceramics Sintered with Yttrium Nitrate
resolves10.1111/j.1551-2916.2011.04799.x
Effective Nitrogen Doping for Fabricating Highly Conductive
<scp>
<scp>β‐SiC</scp>
</scp>
Ceramics
resolves10.1016/j.jeurceramsoc.2012.07.021
Electrical resistivity of silicon carbide ceramics sintered with 1 wt% aluminum nitride and rare earth oxide
resolves10.1016/j.jeurceramsoc.2012.07.001
Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere
resolves10.1111/jace.13031
Electrical and Thermal Properties of
<scp>
<scp>SiC</scp>
</scp>
Ceramics Sintered with Yttria and Nitrides
resolves10.1002/1521-396X(199707)162:1<39::AID-PSSA39>3.0.CO;2-L
Raman Investigation of SiC Polytypes
resolves10.1111/j.1151-2916.1999.tb02149.x
Fine‐Grained Silicon Carbide Ceramics with Oxynitride Glass
resolves10.1023/B:JMSC.0000030713.40220.07
Microstructure stability of fine-grained silicon carbide ceramics during annealing
resolves10.1016/S0955-2219(02)00006-7
Compositional identification of the intergranular phase in liquid phase sintered SiC
resolves10.1103/PhysRevB.22.2842
Site effect on the impurity levels in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mi>R</mml:mi></mml:math>SiC
The 1 reference without a DOI — listed, not checked
no DOI — not checkedElectrical resistivity and metal-nonmetal transion in n-type doped 4H-SiC
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