Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 51 checked references that resolve
resolves10.1016/j.jeurceramsoc.2015.09.042Effects of Y 2 O 3 –RE 2 O 3 (RE = Sm, Gd, Lu) additives on electrical and mechanical properties of SiC ceramics containing Ti 2 CN
resolves10.1111/jace.12351Temperature Dependence of Electrical Resistivity (4–300 K) in Aluminum‐ and Boron‐Doped
<scp>
<scp>SiC</scp>
</scp>
Ceramics
resolves10.1111/jace.12498Control of Electrical Resistivity in Silicon Carbide Ceramics Sintered with Aluminum Nitride and Yttria
resolves10.1111/jace.13311Thermal and Mechanical Properties of SiC–TiC
<sub>0.5</sub>
N
<sub>0.5</sub>
Composites
resolves10.1111/jace.13031Electrical and Thermal Properties of
<scp>
<scp>SiC</scp>
</scp>
Ceramics Sintered with Yttria and Nitrides
resolves10.1016/j.jallcom.2006.05.115Effect of porosity on thermal and electrical properties of polycrystalline bulk ZrN prepared by spark plasma sintering
resolves10.1111/jace.12737Microstructure and Thermal Conductivity of Silicon Carbide with Yttria and Scandia
resolves10.1016/j.scriptamat.2007.04.025Synthesis and microstructural features of ZrB2–SiC-based composites by reactive spark plasma sintering and reactive hot pressing
resolves10.1007/s10853-012-7132-5The stability and elastic properties of NaCl-type MN (M = Ti, V, Zr, Nb, and Ta) compounds investigated by first principles
resolves10.1016/j.jeurceramsoc.2016.04.014Thermal, electrical, and mechanical properties of pressureless sintered silicon carbide ceramics with yttria-scandia-aluminum nitride
resolves10.1103/PhysRevB.22.2842Site effect on the impurity levels in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mi>R</mml:mi></mml:math>SiC
resolves10.1103/PhysRevB.60.16479Doping-induced effects on the band structure in<i>n</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mi>C</mml:mi><mml:mo>−</mml:mo><mml:mo>,</mml:mo></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mo>,</mml:mo></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mo>,</mml:mo></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">C</mml:mi><mml:mo>,</mml:mo></mml:math>and Si
resolves10.2109/jcersj2.119.965Effect of in situ-synthesized nano-size SiC addition on density and electrical resistivity of liquid-phase sintered silicon carbide ceramics
resolves10.1111/jace.13958Effects of Y
<sub>2</sub>
O
<sub>3</sub>
–
<scp>RE</scp>
<sub>2</sub>
O
<sub>3</sub>
(
<scp>RE</scp>
= Sm, Gd, Lu) Additives on Electrical and Thermal Properties of Silicon Carbide Ceramics
resolves10.1016/j.jnucmat.2014.07.030Thermophysical characterisation of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:msub><mml:mrow><mml:mtext>ZrC</mml:mtext></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>N</mml:mtext></mml:mrow><mml:mrow><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math> ceramics fabricated via carbothermic reduction–nitridation
resolves10.1557/JMR.2003.0259Effects of rare-earth oxide and alumina additives on thermal conductivity of liquid-phase-sintered silicon carbide
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