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Revealing correlation of core‒rim structures, defects and stacking-faults in SiC ceramics by integrated scanning electron microscopy

https://doi.org/10.1016/j.jeurceramsoc.2020.09.019
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The 21 checked references that resolve
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Silicon Carbide as a Platform for Power Electronics
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Electronic structure of the neutral silicon vacancy in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>SiC
resolves10.1063/1.325920
Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms
resolves10.1063/1.363221
Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC
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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
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Effects of additives on densification, microstructure and properties of liquid-phase sintered silicon carbide
resolves10.1016/j.jeurceramsoc.2008.12.020
Sintering, high temperature strength and oxidation resistance of liquid-phase-pressureless-sintered SiC–AlN ceramics with addition of rare-earth oxides
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Influence of Y2O3 addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere
resolves10.3139/146.018133
Analytical TEM study of microstructure—property relations in liquid-phase-sintered SiC with AIN—Y<sub>2</sub>O<sub>3</sub>additives
resolves10.1016/j.actamat.2007.06.037
Core–shell structure from the solution–reprecipitation process in hot-pressed AlN-doped SiC ceramics
resolves10.1002/adem.201800821
Intergranular Oxynitride to Regulate Solution–Reprecipitation Process in Gas–Pressure‐Sintered SiC Ceramics with AlN–Y<sub>2</sub>O<sub>3</sub> Additives
resolves10.1016/S0254-0584(00)00437-5
Liquid phase sintering and microstructure–property relationships of silicon carbide ceramics with oxynitride additives
resolves10.1016/S0955-2219(02)00006-7
Compositional identification of the intergranular phase in liquid phase sintered SiC
resolves10.1016/j.msea.2003.11.037
Effect of rare-earth cation additions on the high temperature oxidation behaviour of LPS-SiC
resolves10.1016/S0955-2219(00)00317-4
High-temperature effects in the fracture mechanical behaviour of silicon carbide liquid-phase sintered with AlN–Y2O3 additives
resolves10.1111/j.1151-2916.2003.tb03328.x
Microstructural Changes in Liquid‐Phase‐Sintered Silicon Carbide during Creep in an Oxidizing Environment
resolves10.1016/S0955-2219(02)00132-2
Fracture properties of SiC ceramics with oxynitride additives
resolves10.1023/A:1004552704872
Influence of the α/β-SiC phase transformation on microstructural development and mechanical properties of liquid phase sintered silicon carbide
resolves10.1063/1.359008
Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si
resolves10.1063/1.3551542
Structural and electronic characterization of (2,33) bar-shaped stacking fault in 4H-SiC epitaxial layers
resolves10.1111/j.1151-2916.1993.tb03677.x
Core/Rim Structure of Liquid‐Phase‐Sintered Silicon Carbide
The 4 references without a DOI — listed, not checked
no DOI — not checked10.1016/j.jeurceramsoc.2020.09.019_bib0090
no DOI — not checkedMeasurement of surface topography using SEM with two secondary electron detectors
no DOI — not checkedPrinciples of analytical electron microscopy
no DOI — not checkedEffect of mechanical alloying on sinterability and phase evolution in pressure-less sintered TiB2‒TiC ceramics
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