Reference health
Resistance random access memory
1 of 92 checkable references need attention · checked 2026-07-24
At the dated check, the references listed below either did not resolve in Crossref or DataCite, or carried a retraction notice. Each one is shown with the registry record that put it there.
5 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
References needing attention
marked retracted by the publisher10.1016/j.supflu.2013.09.002
RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
The 91 checked references that resolve
resolves10.1063/1.4921226
The role of contact resistance in GeTe and Ge2Sb2Te5 nanowire phase change memory reset switching current
resolves10.1063/1.4765742
Two-bit multi-level phase change random access memory with a triple phase change material stack structure
resolves10.1063/1.1468914
Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
resolves10.1016/j.mssp.2004.09.127
Non-volatile memory technologies: emerging concepts and new materials
resolves10.1016/j.cap.2011.12.019
Impurity substitution effects in BiFeO3 thin films—From a viewpoint of FeRAM applications
resolves10.1063/1.1459605
Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
resolves10.1088/0022-3727/46/7/074002
Thermally assisted MRAMs: ultimate scalability and logic functionalities
resolves10.1088/0957-4484/22/25/254022
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
resolves10.1063/1.3543837
Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
resolves10.1002/adfm.201001254
Interface‐Engineered Amorphous TiO<sub>2</sub>‐Based Resistive Memory Devices
resolves10.1063/1.2760156
Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide
resolves10.1109/LED.2009.2036276
Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications
resolves10.1002/adma.201104104
Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM
resolves10.1109/LED.2011.2182600
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device
resolves10.1063/1.4902503
Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
resolves10.1109/LED.2013.2241725
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
resolves10.1016/j.mee.2011.03.123
Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
resolves10.1109/TED.2013.2241064
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
resolves10.1002/adma.200900375
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
resolves10.1063/1.3294632
A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
resolves10.1063/1.3629788
Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
resolves10.1063/1.3676194
Silicon introduced effect on resistive switching characteristics of WOX thin films
resolves10.1063/1.4807577
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
resolves10.1063/1.3671565
Metal oxide resistive memory switching mechanism based on conductive filament properties
resolves10.1109/LED.2010.2078794
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
resolves10.1063/1.3564883
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
resolves10.1109/TED.2011.2161088
Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
resolves10.1109/LED.2013.2260125
Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device
resolves10.1109/LED.2011.2114320
Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics
resolves10.1021/nn305510u
HfO<sub>x</sub>-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
resolves10.1109/LED.2010.2041893
Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices
resolves10.1109/TED.2012.2199497
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
resolves10.1038/srep02929
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
resolves10.1109/TED.2011.2160265
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices
resolves10.1109/LED.2013.2242843
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
resolves10.1116/1.4828701
Reactive sputtering of substoichiometric Ta2Ox for resistive memory applications
resolves10.1063/1.3657938
Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation
resolves10.1038/nmat3070
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
resolves10.1016/j.mssp.2014.06.032
Characteristics of tantalum-doped silicon oxide-based resistive random access memory
resolves10.1143/JJAP.51.055701
Influence of Interfacial Tantalum Oxynitride on Resistive Switching of Cu/Cu–SiO<sub>2</sub>/TaN
resolves10.1021/nl401283q
Electrical Performance and Scalability of Pt Dispersed SiO<sub>2</sub>Nanometallic Resistance Switch
resolves10.1109/LED.2012.2217932
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment
resolves10.1109/LED.2013.2248075
Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices
resolves10.1063/1.4819162
Electrical conduction mechanism of Zn:SiO<sub>x</sub> resistance random access memory with supercritical CO<sub>2</sub> fluid process
resolves10.1063/1.4843695
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
resolves10.1109/LED.2012.2217933
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
resolves10.1063/1.3671991
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
resolves10.1002/adfm.201401304
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
resolves10.1021/nn1017582
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
resolves10.1021/acs.jpclett.5b00633
Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices
resolves10.1109/LED.2008.2009774
Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film
resolves10.1063/1.1763222
Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer
resolves10.1063/1.4863722
Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells
resolves10.1109/LED.2014.2311295
Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory
resolves10.1109/LED.2013.2295378
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
resolves10.1109/LED.2013.2251995
Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO<sub>2</sub> fluid treatment
resolves10.1021/ja307933t
A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching
resolves10.1021/nl304246d
Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode
resolves10.1109/TED.2011.2164615
Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon
resolves10.1186/1556-276X-9-52
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
resolves10.1109/LED.2014.2343331
Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor
resolves10.1186/1556-276X-8-497
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
resolves10.1063/1.4897236
Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors
resolves10.1109/LED.2012.2223654
Self-Heating-Effect-Induced Degradation Behaviors in a-InGaZnO Thin-Film Transistors
resolves10.1109/TED.2012.2219313
Systematic Investigations on Self-Heating-Effect-Induced Degradation Behavior in a-InGaZnO Thin-Film Transistors
resolves10.1016/j.tsf.2011.08.104
Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors
resolves10.1149/1.3360181
Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
resolves10.1109/LED.2014.2316673
Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory
resolves10.1109/LED.2014.2316806
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
resolves10.1109/LED.2015.2424226
Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory
The 5 references without a DOI — listed, not checked
no DOI — not checked10.1016/j.mattod.2015.11.009_bib0495
no DOI — not checked10.1016/j.mattod.2015.11.009_bib0775
no DOI — not checked10.1016/j.mattod.2015.11.009_bib0845
no DOI — not checked10.1016/j.mattod.2015.11.009_bib0870
no DOI — not checked10.1016/j.mattod.2015.11.009_bib0925
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
checked 2026-07-24 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record
Embed this badge
Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.
<a href="https://citestamp.com/citestamped/10.1016/j.mattod.2015.11.009"><img src="https://citestamp.com/citestamped/10.1016/j.mattod.2015.11.009/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[](https://citestamp.com/citestamped/10.1016/j.mattod.2015.11.009)