Reference health
Contactless electroreflectance spectroscopy with a semitransparent capacitor made of a silver mesh of ultrathin lines
32/32 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 32 checked references that resolve
resolves10.1016/0927-796X(93)90004-M
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
resolves10.2478/s11772-012-0022-1
Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures
resolves10.1063/1.119160
Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure
resolves10.1063/1.366795
Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells
resolves10.1063/1.1332114
Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium–tin–oxide-coated glass electrode in soft contact mode
resolves10.1063/1.2130535
Contactless electroreflectance and photoreflectance studies of n- and p-type-doped GaN with Ga and N face
resolves10.1088/0268-1242/24/3/035018
Contactless electroreflectance studies of ultra-dilute GaAs<sub>1−<i>x</i></sub>Bi<i><sub>x</sub></i>alloys
resolves10.1116/1.4803838
Characterization of the three-well active region of a quantum cascade laser using contactless electroreflectance
resolves10.1103/PhysRevB.10.4228
Band nonparabolicities, broadening, and internal field distributions: The spectroscopy of Franz-Keldysh oscillations
resolves10.1063/1.100893
Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion region
resolves10.1063/1.4770413
Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures
resolves10.1088/1361-6463/aabf6b
Contactless electroreflectance study of the surface potential barrier in
<i>n</i>
-type and
<i>p</i>
-type InAlAs van Hoof structures lattice matched to InP
resolves10.1063/1.4817296
Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy
resolves10.1016/j.apsusc.2016.12.013
Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface
resolves10.1063/1.1487447
Electroreflectance of the AlGaN/GaN heterostructure and two-dimensional electron gas
resolves10.1063/1.2161394
Electroreflectance spectroscopy of Pt∕AlGaN∕GaN heterostructures exposed to gaseous hydrogen
resolves10.1063/1.363771
Pumping-beam-induced photovoltaic effect on the photoreflectance of a δ-doped GaAs film
resolves10.1063/1.367039
Photoreflectance and time-resolved photoreflectance in delta-doped superlattices
resolves10.1063/1.123040
Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n+-type doped GaAs
resolves10.1063/1.1861968
Photovoltaic effects on Franz–Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped GaAs∕n-type GaAs epitaxial layer structures
resolves10.1063/1.2206707
Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance
resolves10.1002/sdtp.13035
55‐4: XTPL approach to print conductive structures in microscale for next‐generation displays
resolves10.1016/0039-6028(73)90337-3
Third-derivative modulation spectroscopy with low-field electroreflectance
resolves10.1063/1.4954157
Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2
resolves10.1103/PhysRevB.90.205422
Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>WS</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
The 3 references without a DOI — listed, not checked
no DOI — not checkedF.H. Pollak, Modulation spectroscopy of semiconductors and semiconductor microstructures in: M. Balkanski (Ed.), Hand−book on Semiconductors, vol. 2, Elsevier Science B.V., Amsterdam, 1994, pp. 527.
no DOI — not checkedSemiconductor heterostructures and device structures investigated by photoreflectance spectroscopy
no DOI — not checkedMeasuring setup with a GDM-1000 monochromator to measure the anisotropy of optical properties of Zn3P2
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