Reference health
Vertical GaN devices: Process and reliability
25/25 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
14 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 25 checked references that resolve
resolves10.3390/electronics8050575
Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
resolves10.1016/j.vacuum.2014.11.022
A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer
resolves10.1109/LED.2015.2478907
Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
resolves10.1109/LED.2016.2594821
Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
resolves10.1109/LED.2018.2819642
720-V/0.35-m<inline-formula> <tex-math notation="LaTeX">$\Omega \cdot$ </tex-math> </inline-formula>cm<sup>2</sup>Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
resolves10.1109/LED.2016.2646669
High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes
resolves10.1109/TED.2017.2647990
Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison
resolves10.7567/APEX.10.126501
Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
resolves10.1063/1.5049393
Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates
resolves10.1109/LED.2019.2929417
Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates
resolves10.1103/PhysRevMaterials.3.093604
Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays
resolves10.1002/smll.201907364
Dislocation‐Free and Atomically Flat GaN Hexagonal Microprisms for Device Applications
resolves10.1002/pssb.201900581
Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates
resolves10.3390/ma12152455
Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE
resolves10.1016/j.mejo.2019.07.011
Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect
resolves10.3390/mi12040445
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs
resolves10.3390/ma14092316
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
resolves10.3390/ma13214740
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
The 14 references without a DOI — listed, not checked
no DOI — not checked1.7 kV/1.0 mOcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
no DOI — not checked1200V GaN vertical Fin power field-effect transistors
no DOI — not checkedImpact of lowering threading dislocation density on performances of vertical GaN p-n junction diodes
no DOI — not checkedNovel GaN trench MIS barrier Schottky rectifiers with implanted field rings
no DOI — not checked820-V GaN-on-si quasi-vertical p-i-n diodes with BFOM of 2.0 GW/cm2
no DOI — not checkedV. Odnoblyudov et al., U.S. Patent, US10297445B2, May 21, 2019.
no DOI — not checkedFirst demonstration of GaN vertical power FinFETs on engineered substrate
no DOI — not checkedVertical GaN SBDs on large engineered substrates
no DOI — not checkedLateral GaN JFET devices on 200 mm engineered substrates for power switching applications
no DOI — not checkedGrowth of high-quality > 10 µm-thick GaN-on-Si with low-dislocation density in the order of 107/cm2
no DOI — not checked650 V p-GaN gate power HEMTs on 200 mm engineered substrates
no DOI — not checkedDemonstration of high-quality GaN epitaxy on 200mm engineered substrates for vertical power device fabrication
no DOI — not checkedControlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD
no DOI — not checkedRoot cause analysis of gate shorts in semi-vertical GaN MOSFET devices
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carried a retraction notice at that time. It says nothing about the quality, findings,
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