Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 61 checked references that resolve
resolves10.1109/5.649647Metalorganic chemical vapor deposition for optoelectronic devices
resolves10.1002/pssa.200406798Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials
resolves10.1002/cvde.200304172Self‐Limited Pore Size Reduction of Mesoporous Silica Membranes via Pyridine‐Catalyzed Silicon Dioxide ALD
resolves10.1021/cr9903508Chemical Vapor Deposition Methods for the Controlled Preparation of Supported Catalytic Materials
resolves10.1016/j.cattod.2004.06.142Surface characteristics and activity in selective oxidation of -xylene of supported VO catalysts prepared by standard impregnation and atomic layer deposition
resolves10.1116/1.1600451Chemical methods of thin film deposition: Chemical vapor deposition, atomic layer deposition, and related technologies
resolves10.1116/1.590242Directional and ionized physical vapor deposition for microelectronics applications
resolves10.1002/cvde.200500027AVD and ALD as Two Complementary Technology Solutions for Next Generation Dielectric and Conductive Thin‐Film Processing
resolves10.1116/1.1622676Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
resolves10.1109/5.168671Atomic layer epitaxy of III-V compounds: chemistry and applications
resolves10.1557/jmr.2004.19.2.447Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes
resolves10.1002/cvde.200390005A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches
resolves10.1021/ja021169aMeasurements of Electron-Transfer Rates of Charge-Storage Molecular Monolayers on Si(100). Toward Hybrid Molecular/Semiconductor Information Storage Devices
resolves10.1021/jp062019fSurface Chemistry in the Atomic Layer Deposition of TiN Films from TiCl<sub>4</sub> and Ammonia
resolves10.1016/0040-6090(88)90375-6Nitrides of titanium, niobium, tantalum and molybdenum grown as thin films by the atomic layer epitaxy method
resolves10.1063/1.1321775Analysis of a transient region during the initial stage of atomic layer deposition
resolves10.1007/BF03179261Characteristics of TiN thin films grown by ALD using TiCl4 and NH3
resolves10.1143/JJAP.40.4657TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization
resolves10.1063/1.1522485Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
resolves10.1016/S0167-9317(02)00796-7Physical and electrical characterization of ALCVD™ TiN and WNxCy used as a copper diffusion barrier in dual damascene backend structures (08.2)
resolves10.1116/1.1351005Adsorption of TiCl4 and initial stages of Ti growth on Si(001)
resolves10.1063/1.350566Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
resolves10.1149/1.1392497Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films
resolves10.1116/1.1305809Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
resolves10.1021/cm980760xControlled Growth of TaN, Ta<sub>3</sub>N<sub>5</sub>, and TaO<i><sub>x</sub></i>N<i><sub>y</sub></i> Thin Films by Atomic Layer Deposition
resolves10.1557/JMR.2002.0017<i>Tert</i>-butylamine and Allylamine as Reductive Nitrogen Sources in Atomic Layer Deposition of TaN Thin Films
resolves10.1021/cm049516yAtomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides
resolves10.1143/JJAP.39.5987Single-Oriented Growth of (111) Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
resolves10.1116/1.591382Diffusion barrier properties of ZrN films in the Cu/Si contact systems
resolves10.1116/1.1738669Influence of the preferred orientation and thickness of zirconium nitride films on the diffusion property in copper
resolves10.1039/B512074HMixed hydrazido amido/imido complexes of tantalum, hafnium and zirconium: potential precursors for metal nitrideMOCVD
The 17 references without a DOI — listed, not checked
no DOI — not checked10.1016/j.molcata.2007.06.010_bib6
no DOI — not checked10.1016/j.molcata.2007.06.010_bib7
no DOI — not checked10.1016/j.molcata.2007.06.010_bib8
no DOI — not checked10.1016/j.molcata.2007.06.010_bib11
no DOI — not checked10.1016/j.molcata.2007.06.010_bib12
no DOI — not checked10.1016/j.molcata.2007.06.010_bib14
no DOI — not checked10.1016/j.molcata.2007.06.010_bib18
no DOI — not checked10.1016/j.molcata.2007.06.010_bib19
no DOI — not checked10.1016/j.molcata.2007.06.010_bib29
no DOI — not checked10.1016/j.molcata.2007.06.010_bib36
no DOI — not checked10.1016/j.molcata.2007.06.010_bib43
no DOI — not checked10.1016/j.molcata.2007.06.010_bib46
no DOI — not checked10.1016/j.molcata.2007.06.010_bib57
no DOI — not checked10.1016/j.molcata.2007.06.010_bib61
no DOI — not checked10.1016/j.molcata.2007.06.010_bib65
no DOI — not checked10.1016/j.molcata.2007.06.010_bib67
no DOI — not checked10.1016/j.molcata.2007.06.010_bib77
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