Reference health

Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy

https://doi.org/10.1016/j.mssp.2018.05.027
CiteStamped reference-health badge
59/59 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 59 checked references that resolve
resolves10.1116/1.1317922
Surface Photovoltage Spectroscopy—A New Approach to the Study of High-Gap Semiconductor Surfaces
resolves10.1088/0957-0233/12/3/202
Surface voltage and surface photovoltage: history, theory and applications
resolves10.1016/S0167-5729(99)00002-3
Surface photovoltage phenomena: theory, experiment, and applications
resolves10.1002/sia.1132
Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering
resolves10.1021/acs.jpclett.6b01569
Use of Surface Photovoltage Spectroscopy to Measure Built-in Voltage, Space Charge Layer Width, and Effective Band Gap in CdSe Quantum Dot Films
resolves10.1021/acs.jpcc.7b12579
Nanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy
resolves10.1021/acs.nanolett.7b04020
Surface Photovoltage Measurements on a Particle Tandem Photocatalyst for Overall Water Splitting
resolves10.1021/acs.jpcc.5b07132
Temperature Dependence of the Band Gap of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Stabilized with PMMA: A Modulated Surface Photovoltage Study
resolves10.1021/jz501163r
Surface Photovoltage Spectroscopy Study of Organo-Lead Perovskite Solar Cells
resolves10.1021/cm4042154
Thiol-Capped Germanium Nanocrystals: Preparation and Evidence for Quantum Size Effects
resolves10.1038/srep29472
Mie Resonance-Modulated Spatial Distributions of Photogenerated Carriers in Poly(3-hexylthiophene-2,5-diyl)/Silicon Nanopillars
resolves10.1021/jacs.6b07188
Manipulating the Interfacial Energetics of n-type Silicon Photoanode for Efficient Water Oxidation
resolves10.1063/1.4993903
A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures
resolves10.1016/bs.semsem.2014.11.004
Surface and Defect States in Semiconductors Investigated by Surface Photovoltage
resolves10.1063/1.3155798
When group-III nitrides go infrared: New properties and perspectives
resolves10.1038/lsa.2016.30
Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures
resolves10.1002/pssb.201700427
Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy
resolves10.1063/1.4799658
Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy
resolves10.1063/1.3291055
Band bowing and band alignment in InGaN alloys
resolves10.1063/1.1489481
Small band gap bowing in In1−xGaxN alloys
resolves10.1063/1.1605815
Temperature dependence of the fundamental band gap of InN
resolves10.1103/PhysRevB.83.153301
Size effects in band gap bowing in nitride semiconducting alloys
resolves10.1063/1.3595487
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
resolves10.1063/1.4754693
Suppression of <i>m</i>-plane and <i>c</i>-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
resolves10.1063/1.2917290
Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
resolves10.1063/1.3608162
Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures
resolves10.1063/1.3576938
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy
resolves10.1038/nnano.2013.271
Silicon nanostructures for photonics and photovoltaics
resolves10.1021/nl102183x
Optical Properties of Crystalline−Amorphous Core−Shell Silicon Nanowires
resolves10.1021/nl903030h
Electrically Conductive and Optically Active Porous Silicon Nanowires
resolves10.1021/nl4028445
Preparing the Way for Doping Wurtzite Silicon Nanowires while Retaining the Phase
resolves10.1103/PhysRev.99.1151
Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
resolves10.1063/1.3553583
Defect states in nc-Si:H films investigated by surface photovoltage spectroscopy
resolves10.1063/1.3078281
Electronic localization and optical absorption in embedded silicon nanograins
resolves10.1016/j.solmat.2012.09.025
Electrical, optical and structural investigation of plasma-enhanced chemical-vapor-deposited amorphous silicon oxynitride films for solar cell applications
resolves10.1021/acs.jpcc.5b02286
Nanocrystal Formation in Silicon Oxy-Nitride Films for Photovoltaic Applications: Optical and Electrical Properties
resolves10.1063/1.3544421
Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride
resolves10.1103/PhysRevB.93.161413
Single-dot absorption spectroscopy and theory of silicon nanocrystals
resolves10.1155/JNM/2006/91635
Porous and Nanoporous Semiconductors and Emerging Applications
resolves10.1103/PhysRevB.73.045407
Temperature dependent normal and anomalous electron diffusion in porous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>studied by transient surface photovoltage
resolves10.1103/PhysRevB.55.R1930
Surface photovoltage spectroscopy of porous silicon
resolves10.1016/j.micromeso.2014.05.013
Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy
resolves10.1021/acsami.5b02089
Optical Properties of Nanoporous Germanium Thin Films
resolves10.1063/1.3300837
High-performance surface-enhanced Raman scattering sensors based on Ag nanoparticles-coated Si nanowire arrays for quantitative detection of pesticides
resolves10.1021/cr2001178
Gold Nanoparticles in Chemical and Biological Sensing
resolves10.1063/1.3372757
Nanostructuring in Ge by self-ion implantation
resolves10.1088/0957-4484/23/39/395604
Nanoporous Ge electrode as a template for nano-sized ( &lt; 5 nm) Au aggregates
resolves10.1143/APEX.5.035201
Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
resolves10.1039/B514191E
Why gold nanoparticles are more precious than pretty gold: Noble metal surface plasmon resonance and its enhancement of the radiative and nonradiative properties of nanocrystals of different shapes
resolves10.1016/j.matlet.2013.01.017
Influence of microstructure on voids nucleation in nanoporous Ge
resolves10.1364/OE.20.008228
Dependences of photoluminescence from P-implanted epitaxial Ge
resolves10.1021/nl101004q
Size Dependence in Hexagonal Mesoporous Germanium: Pore Wall Thickness versus Energy Gap and Photoluminescence
resolves10.1063/1.4789959
Influence of the embedding matrix on optical properties of Ge nanocrystals-based nanocomposite
resolves10.1088/0022-3727/46/15/153001
Nanocrystals for silicon-based light-emitting and memory devices
resolves10.1063/1.3698091
Absolute absorption cross sections of ligand-free colloidal germanium nanocrystals
resolves10.1016/j.physe.2012.01.017
Interconnection effects on the electronic and optical properties of Ge nanostructures: A semi-empirical approach
resolves10.1063/1.105773
Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices
resolves10.1021/jz401576b
Tunable Band Gap Emission and Surface Passivation of Germanium Nanocrystals Synthesized in the Gas Phase
resolves10.1063/1.3446848
Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy
The 2 references without a DOI — listed, not checked
no DOI — not checkedNSM Archive - Gallium Nitride (GaN) - Band structure (n.d.). 〈http://www.ioffe.ru/SVA/NSM/Semicond/GaN/bandstr.html〉 (Accessed 28 February 2018).
no DOI — not checkedSize effects on semiconductor nanoparticles
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-22 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

Embed this badge

Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.

<a href="https://citestamp.com/citestamped/10.1016/j.mssp.2018.05.027"><img src="https://citestamp.com/citestamped/10.1016/j.mssp.2018.05.027/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[![CiteStamped reference-health badge](https://citestamp.com/citestamped/10.1016/j.mssp.2018.05.027/badge.svg)](https://citestamp.com/citestamped/10.1016/j.mssp.2018.05.027)