Every reference with a DOI in the deposited reference list resolved to a known
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withdrawal, or removal notice.
The 59 checked references that resolve
resolves10.1116/1.1317922Surface Photovoltage Spectroscopy—A New Approach to the Study of High-Gap Semiconductor Surfaces
resolves10.1002/sia.1132Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering
resolves10.1021/acs.jpclett.6b01569Use of Surface Photovoltage Spectroscopy to Measure Built-in Voltage, Space Charge Layer Width, and Effective Band Gap in CdSe Quantum Dot Films
resolves10.1021/acs.jpcc.7b12579Nanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy
resolves10.1021/acs.jpcc.5b07132Temperature Dependence of the Band Gap of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Stabilized with PMMA: A Modulated Surface Photovoltage Study
resolves10.1021/jz501163rSurface Photovoltage Spectroscopy Study of Organo-Lead Perovskite Solar Cells
resolves10.1021/cm4042154Thiol-Capped Germanium Nanocrystals: Preparation and Evidence for Quantum Size Effects
resolves10.1038/srep29472Mie Resonance-Modulated Spatial Distributions of Photogenerated Carriers in Poly(3-hexylthiophene-2,5-diyl)/Silicon Nanopillars
resolves10.1021/jacs.6b07188Manipulating the Interfacial Energetics of n-type Silicon Photoanode for Efficient Water Oxidation
resolves10.1063/1.4993903A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures
resolves10.1063/1.3155798When group-III nitrides go infrared: New properties and perspectives
resolves10.1038/lsa.2016.30Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures
resolves10.1002/pssb.201700427Probing the Local Electrical Properties of Al(In,Ga)N by Kelvin Probe Force Microscopy
resolves10.1063/1.4799658Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy
resolves10.1063/1.3595487Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
resolves10.1063/1.4754693Suppression of <i>m</i>-plane and <i>c</i>-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
resolves10.1063/1.2917290Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
resolves10.1063/1.3608162Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures
resolves10.1063/1.3576938Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy
resolves10.1021/nl102183xOptical Properties of Crystalline−Amorphous Core−Shell Silicon Nanowires
resolves10.1021/nl903030hElectrically Conductive and Optically Active Porous Silicon Nanowires
resolves10.1021/nl4028445Preparing the Way for Doping Wurtzite Silicon Nanowires while Retaining the Phase
resolves10.1103/PhysRev.99.1151Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
resolves10.1063/1.3553583Defect states in nc-Si:H films investigated by surface photovoltage spectroscopy
resolves10.1063/1.3078281Electronic localization and optical absorption in embedded silicon nanograins
resolves10.1016/j.solmat.2012.09.025Electrical, optical and structural investigation of plasma-enhanced chemical-vapor-deposited amorphous silicon oxynitride films for solar cell applications
resolves10.1021/acs.jpcc.5b02286Nanocrystal Formation in Silicon Oxy-Nitride Films for Photovoltaic Applications: Optical and Electrical Properties
resolves10.1063/1.3544421Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride
resolves10.1103/PhysRevB.73.045407Temperature dependent normal and anomalous electron diffusion in porous<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>studied by transient surface photovoltage
resolves10.1063/1.3300837High-performance surface-enhanced Raman scattering sensors based on Ag nanoparticles-coated Si nanowire arrays for quantitative detection of pesticides
resolves10.1143/APEX.5.035201Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
resolves10.1039/B514191EWhy gold nanoparticles are more precious than pretty gold: Noble metal surface plasmon resonance and its enhancement of the radiative and nonradiative properties of nanocrystals of different shapes
resolves10.1021/nl101004qSize Dependence in Hexagonal Mesoporous Germanium: Pore Wall Thickness versus Energy Gap and Photoluminescence
resolves10.1063/1.4789959Influence of the embedding matrix on optical properties of Ge nanocrystals-based nanocomposite
resolves10.1063/1.3698091Absolute absorption cross sections of ligand-free colloidal germanium nanocrystals
resolves10.1016/j.physe.2012.01.017Interconnection effects on the electronic and optical properties of Ge nanostructures: A semi-empirical approach
resolves10.1063/1.105773Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices
resolves10.1021/jz401576bTunable Band Gap Emission and Surface Passivation of Germanium Nanocrystals Synthesized in the Gas Phase
resolves10.1063/1.3446848Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy
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