Reference health
Design and fabrication of high power InGaN blue laser diode over 8 W
17/17 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 17 checked references that resolve
resolves10.1063/1.4915324
High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates
resolves10.1063/1.117816
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
resolves10.1117/12.2254504
GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs
resolves10.1109/LPT.2017.2770169
GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation
resolves10.1109/JQE.2004.826437
Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance
resolves10.1109/JPHOT.2018.2878443
Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
resolves10.1143/JJAP.37.L1020
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
resolves10.1088/0268-1242/30/7/072001
Kinetics of catastrophic optical damage in GaN-based diode lasers
resolves10.1002/lpor.201000023
Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers
resolves10.1063/1.3184595
Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage
resolves10.1002/pssa.201700498
Al<sub>2</sub>O<sub>3</sub>Insertion Layer for Improved PEALD SiO<sub>2</sub>/(Al)GaN Interfaces
resolves10.1088/1361-6463/ab243f
Thermomechanical issues of high power laser diode catastrophic optical damage
resolves10.1016/j.mee.2011.03.098
Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
resolves10.1063/1.338356
The effects of Cr2O3 and Fe2O3 additions on the thermal conductivity of Al2O3
resolves10.1063/1.112355
Thermal conductivity of sputtered and evaporated SiO2 and TiO2 optical coatings
The 3 references without a DOI — listed, not checked
no DOI — not checkedHigh-efficiency blue and green laser diodes for laser displays
no DOI — not checkedEffect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
no DOI — not checkedReversed effects of quantum well numbers and temperature on optical power and wavelength of a designed ultraviolet semiconductor laser based on GaN/InGaN
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work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
checked 2026-07-22 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record
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