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Sensitivity of N-polar GaN surface barrier to ambient gases
27/27 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 27 checked references that resolve
resolves10.1088/0953-8984/16/29/R02
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
resolves10.1063/1.2959429
Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors
resolves10.7567/JJAP.55.05FA08
Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m-plane GaN surfaces to vacuum and air ambient
resolves10.1063/1.1808227
Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition
resolves10.1002/pssc.200880973
InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE
resolves10.1063/1.4939146
Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures
resolves10.1063/1.100893
Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion region
resolves10.1063/1.4770413
Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures
resolves10.1063/1.4707386
Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
resolves10.1116/1.4793765
Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy
resolves10.1063/1.4817296
Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy
resolves10.1016/j.tsf.2006.12.008
Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas
resolves10.1063/1.4861746
Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy
resolves10.1002/pssc.201100150
Electromodulation spectroscopy of optical transitions and electric field distribution in GaN/AlGaN/GaN transistor heterostructures with various AlGaN layer thicknesses
resolves10.1063/1.3264954
Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires
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