Reference health
Towards the implementation of atomic layer deposited In2O3:H in silicon heterojunction solar cells
36/36 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 36 checked references that resolve
resolves10.1109/JPHOTOV.2011.2174967
Current Losses at the Front of Silicon Heterojunction Solar Cells
resolves10.1016/j.tsf.2007.05.084
Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide
resolves10.1016/j.solmat.2013.03.024
Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells
resolves10.1063/1.3592885
Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes
resolves10.1143/JJAP.46.L685
Hydrogen-doped In<sub>2</sub>O<sub>3</sub> as High-mobility Transparent Conductive Oxide
resolves10.1016/j.solmat.2008.09.047
High-mobility hydrogen-doped In2O3In2O3 transparent conductive oxide for a-Si:H/c-Si heterojunction solar cells
resolves10.1002/pssr.201409426
High mobility In<sub>2</sub>O<sub>3</sub>:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization
resolves10.1143/APEX.1.041501
Reduction of Optical Loss in Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells by High-Mobility Hydrogen-Doped In<sub>2</sub>O<sub>3</sub>Transparent Conductive Oxide
resolves10.1063/1.4928747
22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector
resolves10.1016/j.tsf.2009.08.060
Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells
resolves10.1063/1.4921445
Hydrogenated indium oxide window layers for high-efficiency Cu(In,Ga)Se2 solar cells
resolves10.1002/pip.2655
Potential gain in photocurrent generation for Cu(In,Ga)Se<sub>2</sub> solar cells by using In<sub>2</sub>O<sub>3</sub> as a transparent conductive oxide layer
resolves10.1038/ncomms9932
Low-temperature-processed efficient semi-transparent planar perovskite solar cells for bifacial and tandem applications
resolves10.1063/1.4936328
Enhanced absorption in tandem solar cells by applying hydrogenated In2O3 as electrode
resolves10.1021/acs.jpclett.5b02686
Efficient Monolithic Perovskite/Silicon Tandem Solar Cell with Cell Area >1 cm<sup>2</sup>
resolves10.1063/1.4764529
Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering
resolves10.1088/0268-1242/29/12/122001
Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO
resolves10.1109/JPHOTOV.2014.2344771
Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells
resolves10.1021/cm103637t
Indium Oxide Atomic Layer Deposition Facilitated by the Synergy between Oxygen and Water
resolves10.1021/acsami.5b04420
Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In<sub>2</sub>O<sub>3</sub>:H Prepared by Atomic Layer Deposition
resolves10.1103/PhysRev.140.A1133
Self-Consistent Equations Including Exchange and Correlation Effects
resolves10.1103/PhysRevLett.78.1396
Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
resolves10.1063/1.3382344
A consistent and accurate<i>ab initio</i>parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
resolves10.1063/1.2832630
An experimental study of charge distribution in crystalline and amorphous Si nanoclusters in thin silica films
resolves10.1103/PhysRevB.38.6084
Microscopic structure of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>/Si interface
resolves10.1063/1.94565
Probing the transition layer at the SiO2-Si interface using core level photoemission
resolves10.1063/1.4941298
<i>In situ</i> photoluminescence study of plasma-induced damage at the <i>a</i>-Si:H/c-Si interface
resolves10.1063/1.2913320
Staebler–Wronski-like formation of defects at the amorphous-silicon–crystalline silicon interface during illumination
resolves10.1103/PhysRevB.83.233301
Very fast light-induced degradation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>a</mml:mi></mml:mrow></mml:math>-Si:H/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>c</mml:mi></mml:mrow></mml:math>-Si(100) interfaces
resolves10.1063/1.3601485
Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces
resolves10.1149/1.3552663
Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
resolves10.1063/1.2432297
Abruptness of a-Si:H∕c-Si interface revealed by carrier lifetime measurements
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record
Embed this badge
Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.
<a href="https://citestamp.com/citestamped/10.1016/j.solmat.2017.01.011"><img src="https://citestamp.com/citestamped/10.1016/j.solmat.2017.01.011/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[](https://citestamp.com/citestamped/10.1016/j.solmat.2017.01.011)