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Hydrogen-doped In2O3 for silicon heterojunction solar cells: Identification of a critical threshold for water content and rf sputtering power
40/40 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
7 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 40 checked references that resolve
resolves10.1143/JJAP.46.L685
Hydrogen-doped In<sub>2</sub>O<sub>3</sub> as High-mobility Transparent Conductive Oxide
resolves10.1143/APEX.1.041501
Reduction of Optical Loss in Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells by High-Mobility Hydrogen-Doped In<sub>2</sub>O<sub>3</sub>Transparent Conductive Oxide
resolves10.1063/1.3284960
Hydrogen-doped In2O3 transparent conducting oxide films prepared by solid-phase crystallization method
resolves10.1016/j.solmat.2013.03.024
Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells
resolves10.1002/pssa.201600464
Amorphous and crystalline In<sub>2</sub>O<sub>3</sub>-based transparent conducting films for photovoltaics
resolves10.1134/S1063782613030275
Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells
resolves10.1016/j.solmat.2016.01.005
Cerium oxide and hydrogen co-doped indium oxide films for high-efficiency silicon heterojunction solar cells
resolves10.1016/j.tsf.2015.03.022
High mobility In2O3:H as contact layer for a-Si:H/c-Si heterojunction and μc-Si:H thin film solar cells
resolves10.1016/j.tsf.2009.08.060
Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells
resolves10.1063/1.4921445
Hydrogenated indium oxide window layers for high-efficiency Cu(In,Ga)Se2 solar cells
resolves10.1063/1.3592885
Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes
resolves10.1002/pip.664
13·9%‐efficient CdTe polycrystalline thin‐film solar cells with an infrared transmission of ∼50%
resolves10.1016/j.jallcom.2017.02.133
Study on the hydrogen doped indium oxide for silicon heterojunction solar cell application
resolves10.1016/j.mssp.2018.09.012
Improved electrical properties of pulsed DC magnetron sputtered hydrogen doped indium oxide after annealing in air
resolves10.1063/1.4962008
On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition
resolves10.1063/1.4977104
Effect of sputtering power on crystallinity, intrinsic defects, and optical and electrical properties of Al-doped ZnO transparent conducting thin films for optoelectronic devices
resolves10.1002/tee.22494
Role of sputtering power on the microstructural and electro‐optical properties of ITO thin films deposited using DC sputtering technique
resolves10.1016/j.mee.2011.03.147
Effects of rapid thermal annealing on the properties of In2O3 thin films grown on glass substrate by rf reactive magnetron sputtering
resolves10.4028/www.scientific.net/KEM.659.615
Comparative Study of Non-Annealing and Annealing on Properties of ITO Deposited by RF Magnetron Sputtering
resolves10.1016/j.vacuum.2004.01.081
Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering
resolves10.1088/0268-1242/11/2/009
Effect of oxygen concentration in the sputtering ambient on the microstructure, electrical and optical properties of radio-frequency magnetron-sputtered indium tin oxide films
resolves10.1016/S0040-6090(96)09167-5
Optimization of sputtered ITO films with respect to the oxygen partial pressure and substrate temperature
resolves10.1016/j.tsf.2005.10.068
Influence of the sputtering system's vacuum level on the properties of indium tin oxide films
resolves10.1016/j.jcrysgro.2007.01.037
Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering
resolves10.1016/j.tsf.2015.06.035
Effect of the RF sputtering power on microstructural, optical and electrical properties of Al doped ZnO thin films
resolves10.1063/1.5142999
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
resolves10.1016/0040-6090(94)90646-7
A microstructural study of low resistivity tin-doped indium oxide prepared by d.c. magnetron sputtering
resolves10.1016/S0921-5107(00)00477-3
Properties of ITO thin films deposited by RF magnetron sputtering at elevated substrate temperature
resolves10.1016/j.tsf.2005.08.256
Structural study of amorphous In2O3 film by grazing incidence X-ray scattering (GIXS) with synchrotron radiation
resolves10.1016/S0921-5107(99)00300-1
Application of Nd:YLF laser to amorphous silicon crystallization process
resolves10.1063/1.4935125
Environmental stability of high-mobility indium-oxide based transparent electrodes
resolves10.1063/1.5033561
Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide
resolves10.1109/JPHOTOV.2015.2450993
Low-Temperature High-Mobility Amorphous IZO for Silicon Heterojunction Solar Cells
resolves10.1143/JJAP.31.3518
Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
The 7 references without a DOI — listed, not checked
no DOI — not checkedZur elektronentheorie der Metalle
no DOI — not checkedResonant doping for high mobility transparent conductors: the case of Mo-doped In2O3
no DOI — not checkedHigh electron mobility W-doped In2O3In2O3 thin films by pulsed laser deposition Appl
no DOI — not checked10.1016/j.solmat.2020.110844_bib14
no DOI — not checkedProperties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas
no DOI — not checked10.1016/j.solmat.2020.110844_bib25
no DOI — not checkedPowder Diffraction File Card No 06-0416 2001 Joint Committee on Powder Diffraction Standards—International Centre for Diffraction Data, Pennsylvania.
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