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Research on silicon wafer surface phase under the Ultra-thin slicing process and its etching hindrance behavior during metal-assisted chemical etching

https://doi.org/10.1016/j.surfin.2023.103540
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38/38 checkable references clean · checked 2026-07-24

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

17 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 38 checked references that resolve
resolves10.1021/acsami.9b00724
High-Efficient Solar Cells Textured by Cu/Ag-Cocatalyzed Chemical Etching on Diamond Wire Sawing Multicrystalline Silicon
resolves10.1016/j.jmatprotec.2007.11.161
Cost-effective power converter for thin film solar cell technology and improved power quality
resolves10.1016/j.solener.2014.04.027
Numerical simulation of bowing phenomenon in ultra-thin crystalline silicon solar cells
resolves10.1016/j.optlastec.2017.06.009
Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell
resolves10.1016/j.ijrmhm.2010.05.003
100 years of doped tungsten wire
resolves10.1016/j.solmat.2017.05.042
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
resolves10.1016/j.solener.2020.07.018
Effect of cutting parameters on surface integrity of monocrystalline silicon sawn with an endless diamond wire saw
resolves10.1016/j.solener.2020.07.019
Surface damage and metal-catalyzed chemical etching investigation of multicrystalline silicon by diamond wire sawing
resolves10.1016/j.ijmachtools.2008.12.007
Mechanism for material removal in diamond turning of reaction-bonded silicon carbide
resolves10.1038/s41560-020-00714-4
Progress and prospects for ultrathin solar cells
resolves10.1016/j.apsusc.2016.02.028
Structure and antireflection properties of SiNWs arrays form mc-Si wafer through Ag-catalyzed chemical etching
resolves10.1016/j.matlet.2017.03.131
A simple and low-cost chemical etching method for controllable fabrication of large-scale kinked silicon nanowires
resolves10.1021/acsami.7b18163
Ordered Topographically Patterned Silicon by Insect-Inspired Capillary Submicron Stamping
resolves10.1002/adma.201001784
Metal‐Assisted Chemical Etching of Silicon: A Review
resolves10.1016/j.actamat.2004.12.025
Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior
resolves10.1103/PhysRevB.34.4679
Crystal data for high-pressure phases of silicon
resolves10.1016/S0921-5093(99)00030-1
Structure of silicon processed by severe plastic deformation
resolves10.1088/0957-4484/16/8/073
Etch stop of silicon surface induced by tribo-nanolithography
resolves10.1016/j.jmatprotec.2006.11.151
Characteristics of mask layer on (100) silicon induced by tribo-nanolithography with diamond tip cantilevers based on AFM
resolves10.1039/C6RA19819H
Efficient light trapping of quasi-inverted nanopyramids in ultrathin c-Si through a cost-effective wet chemical method
resolves10.1186/s11671-018-2502-9
Fabrication of 20.19% Efficient Single-Crystalline Silicon Solar Cell with Inverted Pyramid Microstructure
resolves10.1016/j.nantod.2017.10.013
Silicon nanostructures for solar-driven catalytic applications
resolves10.1002/pssa.200521259
Deformation mechanisms of silicon during nanoscratching
resolves10.1016/j.commatsci.2021.110344
Evolution of high-pressure metastable phase Si-XIII during silicon nanoindentation: A molecular dynamics study
resolves10.1116/1.577625
The air-exposed surface of sputter deposited silicon carbide studied by x-ray photoelectron spectroscopy
resolves10.1016/S0022-3697(71)80159-2
Optical properties of non-crystalline Si, SiO, SiOx and SiO2
resolves10.1109/16.119035
Optimized antireflection coatings for high-efficiency silicon solar cells
resolves10.1002/adma.202005932
Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching
resolves10.1007/s12633-021-01359-y
Surface Texturing Behavior of Nano-Copper Particles under Copper-Assisted Chemical Etching with Various Copper Salts System
resolves10.1021/jacs.1c12212
Stabilizing Cu<sup>2+</sup> Ions by Solid Solutions to Promote CO<sub>2</sub> Electroreduction to Methane
resolves10.1021/jacs.8b11237
Electrochemical Fragmentation of Cu<sub>2</sub>O Nanoparticles Enhancing Selective C–C Coupling from CO<sub>2</sub> Reduction Reaction
resolves10.1039/b202140d
Crystal faces of rutile and anatase TiO2 particles and their roles in photocatalytic reactions
resolves10.1016/0039-6028(86)90857-5
Calculation of Schottky barrier heights from semiconductor band structures
resolves10.1063/1.371191
Electronic states and effective negative electron affinity at cesiated <i>p</i>-GaN surfaces
resolves10.1063/1.1367275
Electron affinity of AlxGa1−xN(0001) surfaces
resolves10.1063/1.1509472
Energy level alignment at organic/metal interfaces: Dipole and ionization potential
resolves10.1016/0021-9517(88)90092-9
Electronic structures of XMo12O40 heteropolyanions (X = P, As, Si, and Ge) and their reduction behavior
resolves10.1039/c1cc10665a
Crystal facet engineering of semiconductor photocatalysts: motivations, advances and unique properties
The 17 references without a DOI — listed, not checked
no DOI — not checkedAmbient-Air-Stable inverted perovskite solar cells by carbazole analog tailored perovskite thin films
no DOI — not checkedStudy on removal mechanism of fixed-abrasive diamond wire saw slicing monocrystalline silicon
no DOI — not checkedEffect of growth rate and wafering on residual stress of diamond wire sawn silicon wafers
no DOI — not checkedAnalyses of diamond wire sawn wafers: effect of various cutting parameters
no DOI — not checkedSurface texturing for silicon solar cells using reactive ion etching technique
no DOI — not checkedStudy on fabrication of silicon microcantilevers for the pulse sensor by a laser etching technology
no DOI — not checkedMaskless inverted pyramid texturization of silicon
no DOI — not checkedPhase transformation during silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation
no DOI — not checkedControllable nanoscale inverted pyramids for highly efficient quasi-omnidirectional crystalline silicon solar cells
no DOI — not checkedPre-texturing thermal treatment for saw-damage-removal-free wet texturing of monocrystalline silicon wafers
no DOI — not checkedReview of silicon recovery in the photovoltaic industry
no DOI — not checkedMechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon
no DOI — not checkedPhase transformations of silicon caused by contact loading
no DOI — not checkedMicrostructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on and -orientated c-Si wafers
no DOI — not checkedDifference in anisotropic etching characteristics of alkaline and copper based acid solutions for single-crystalline Si
no DOI — not checkedMetal particle evolution behavior during metal assisted chemical etching of silicon
no DOI — not checkedMatching bidentate ligand anchoring: an accurate control strategy for stable single-Atom/ZIF Nanocatalysts
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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