Reference health

Bias-enhanced nucleation of diamond on iridium: A comprehensive study of the first stages by sequential surface analysis

https://doi.org/10.1016/j.susc.2010.12.017
CiteStamped reference-health badge
30/30 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

6 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 30 checked references that resolve
resolves10.1063/1.123029
Diamond/Ir/SrTiO 3 : A material combination for improved heteroepitaxial diamond films
resolves10.1063/1.1424059
Mosaicity reduction during growth of heteroepitaxial diamond films on iridium buffer layers: Experimental results and numerical simulations
resolves10.1038/424500a
The road to diamond wafers
resolves10.1063/1.1758780
A route to diamond wafers by epitaxial deposition on silicon via iridium/yttria-stabilized zirconia buffer layers
resolves10.1016/S0925-9635(01)00431-9
First stages of diamond nucleation on iridium buffer layers
resolves10.1016/j.diamond.2003.11.092
Surface study of iridium buffer layers during the diamond bias enhanced nucleation in a HFCVD reactor
resolves10.1016/S0925-9635(01)00626-4
Analysis of the total carbon deposition during the bias enhanced nucleation of diamond on Ir/SrTiO3 (001) using 13C-methane
resolves10.1016/j.diamond.2005.10.039
Transmission electron microscopy study of the diamond nucleation layer on iridium
resolves10.1016/j.diamond.2008.01.115
Transmission electron microscopy study of the very early stages of diamond growth on iridium
resolves10.1103/PhysRevB.50.8402
Nucleation and initial growth phase of diamond thin films on (100) silicon
resolves10.1016/0925-9635(93)90045-4
Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition
resolves10.1016/S0925-9635(02)00361-8
Domain formation in diamond nucleation on iridium
resolves10.1016/j.diamond.2004.01.040
Diamond heteroepitaxy: pattern formation and mechanisms
resolves10.1016/j.diamond.2008.08.013
Diamond nucleation on iridium: Local variations of structure and density within the BEN layer
resolves10.1002/pssa.200982204
Comparison of diamond bias enhanced nucleation on Ir and 3C‐SiC: A high resolution electron energy loss spectroscopy study
resolves10.1126/science.1074551
The Mechanism of Diamond Nucleation from Energetic Species
resolves10.1016/j.diamond.2006.11.091
Combined AFM–SEM study of the diamond nucleation layer on Ir(001)
resolves10.1002/sia.740200309
XPS reference procedure for the accurate intensity calibration of electron spectrometers— results of a BCR intercomparison co‐sponsored by the VAMAS SCA TWA
resolves10.1103/PhysRevB.9.5268
X-ray photoemission studies of diamond, graphite, and glassy carbon valence bands
resolves10.1016/S0169-4332(98)00319-5
Direct evaluation of the sp3 content in diamond-like-carbon films by XPS
resolves10.1002/sia.740171304
Calculations of electorn inelastic mean free paths. II. Data for 27 elements over the 50–2000 eV range
resolves10.1103/PhysRevB.5.4709
High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of Gold
resolves10.1016/S0039-6028(00)00544-6
Behaviour of textured Ir layers exposed to the HFCVD environment of diamond
resolves10.1016/0039-6028(92)90804-F
An XPS study of the composition of iridium films obtained by MO CVD
resolves10.1016/0036-9748(72)90163-9
The solubility of carbon in rhodium ruthenium, iridium and rhenium
resolves10.1063/1.1922571
Why is iridium the best substrate for single crystal diamond growth?
resolves10.1016/j.physleta.2010.06.009
Enhanced deuterium diffusion in boron doped monocrystalline diamond films using bias-assisted MPCVD
resolves10.1016/S0925-9635(99)00216-2
Ion energy distributions and their evolution during bias-enhanced nucleation of chemical vapor deposition of diamond
resolves10.1016/S0022-3093(98)00085-4
Bonding properties of rf-co-sputtering amorphous Ge–C films studied by X-ray photoelectron and Raman spectroscopies
resolves10.1063/1.343193
The role of hydrogen in vapor deposition of diamond
The 6 references without a DOI — listed, not checked
no DOI — not checked10.1016/j.susc.2010.12.017_bb0060
no DOI — not checked10.1016/j.susc.2010.12.017_bb0085
no DOI — not checked10.1016/j.susc.2010.12.017_bb0125
no DOI — not checked10.1016/j.susc.2010.12.017_bb0135
no DOI — not checked10.1016/j.susc.2010.12.017_bb0145
no DOI — not checked10.1016/j.susc.2010.12.017_bb0150
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-22 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

Embed this badge

Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.

<a href="https://citestamp.com/citestamped/10.1016/j.susc.2010.12.017"><img src="https://citestamp.com/citestamped/10.1016/j.susc.2010.12.017/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[![CiteStamped reference-health badge](https://citestamp.com/citestamped/10.1016/j.susc.2010.12.017/badge.svg)](https://citestamp.com/citestamped/10.1016/j.susc.2010.12.017)