Reference health
Surface photovoltage and modulation spectroscopy of E− and E+ transitions in GaNAs layers
34/34 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 34 checked references that resolve
resolves10.1103/PhysRevB.65.233210
Band structure of highly mismatched semiconductor alloys: Coherent potential approximation
resolves10.1143/JJAP.31.L853
Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
resolves10.1103/PhysRevLett.82.3312
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>GaAs</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>N</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="italic">x</mml:mi><mml:mi/><mml:mo><</mml:mo><mml:mi/><mml:mn>0.03</mml:mn></mml:math>
resolves10.1063/1.126360
Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
resolves10.1063/1.1311324
Direct determination of electron effective mass in GaNAs/GaAs quantum wells
resolves10.1103/PhysRevB.82.125203
Nitrogen composition dependence of electron effective mass in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>GaAs</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mtext>N</mml:mtext><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>
resolves10.1063/1.3055605
Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance
resolves10.1063/1.4747504
Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers
resolves10.1109/JSTQE.2003.819516
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
resolves10.1063/1.4790568
Band structure and the optical gain of GaInNAs/GaAs quantum wells modeled within 10-band and 8-band <i>kp</i> model
resolves10.1103/PhysRevB.60.R11245
Localization and anticrossing of electron levels in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GaAs</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>alloys
resolves10.1063/1.2786675
Near band-edge luminescence and evidence of the weakening of the N-conduction-band coupling for partially relaxed and high nitrogen composition GaAs1−xNx epilayers
resolves10.1063/1.1467612
Quaternary GaInAsN with high In content: Dependence of band gap energy on N content
resolves10.1016/S0167-5729(99)00002-3
Surface photovoltage phenomena: theory, experiment, and applications
resolves10.1049/ip-opt:20030044
Photoreflectance and surface photovoltage spectroscopy characterisation of an InGaP∕InGaAsN∕GaAs NpN DHBT structure
resolves10.1063/1.2743088
Interdiffused InAs∕InGaAlAs quantum dashes-in-well structures studied by surface photovoltage spectroscopy
resolves10.1063/1.2740357
A surface photovoltage spectroscopy study of GaAs∕AlAs complicated nanostructures with graded interfaces
resolves10.1063/1.2907406
Surface photovoltage and photoluminescence excitation spectroscopy of stacked self-assembled InAs quantum dots with InGaAs overgrown layers
resolves10.1103/PhysRevB.66.205324
Surface photovoltage studies of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mrow><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>quantum well structures
resolves10.1063/1.1898441
Nitrogen and indium dependence of the band offsets in InGaAsN quantum wells
resolves10.1063/1.2227618
Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells
resolves10.1063/1.2798629
Influence of N on the electronic properties of GaAsN alloy films and heterostructures
resolves10.1063/1.3213613
Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations
resolves10.1051/epjap:2004056
Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds
resolves10.1016/0039-6028(73)90337-3
Third-derivative modulation spectroscopy with low-field electroreflectance
The 1 reference without a DOI — listed, not checked
no DOI — not checkedContactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
checked 2026-07-22 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record
Embed this badge
Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.
<a href="https://citestamp.com/citestamped/10.1016/j.tsf.2014.07.052"><img src="https://citestamp.com/citestamped/10.1016/j.tsf.2014.07.052/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[](https://citestamp.com/citestamped/10.1016/j.tsf.2014.07.052)