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Float zone growth and characterization of Ge1−xSix (x⩽10at%) single crystals

https://doi.org/10.1016/s0022-0248(01)01394-x
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20/20 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

15 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 20 checked references that resolve
resolves10.1016/0022-0248(81)90331-6
Si-Ge solid solution single crystal growth by electron beam floating zone technique
resolves10.1007/BF00125881
Bulk growth of silicon-germanium solid solutions
resolves10.1007/s11664-004-0267-7
Bulk single crystal growth of silicon-germanium
resolves10.1016/S0022-0248(97)00619-2
Measurement of the density and the thermal expansion coefficient of molten silicon using electromagnetic levitation
resolves10.1016/0022-0248(95)00968-X
SixGe1 − x single crystals grown by the RF-heated float zone technique
resolves10.1016/0022-0248(95)00460-2
Extremely reduced dislocation density in SixGe1 − x single crystals grown by the float zone technique
resolves10.1016/S0022-0248(97)00485-5
Floating-zone growth of silicon in magnetic fields. I. Weak static axial fields
resolves10.1016/0022-0248(90)90905-Z
Surface temperature oscillations of a floating zone resulting from oscillatory thermocapillary convection
resolves10.1016/0022-0248(89)90243-1
Coupling and separation of buoyant and thermocapillary convection
resolves10.1016/0022-0248(96)00128-5
Unstable flow and solidification speed due to the interaction of thermocapillary and solutocapillary forces in directional solidification
resolves10.1016/S0022-0248(98)01071-9
Thermal and solutal Marangoni convection in In–Ga–Sb system
resolves10.1016/0022-0248(94)90121-X
Macrosegregation and convection in the horizontal Bridgman configuration II. Concentrated alloys
resolves10.1016/0001-6160(53)90126-6
The redistribution of solute atoms during the solidification of metals
resolves10.1016/0022-0248(74)90172-9
A survey of interface stability criteria in the elemental alloy systems: Ge-Si, Bi-Sb, And Se-Te
resolves10.1016/S0022-0248(98)00410-2
Growth and characterization of Ge1−xSix (x⩽10at%) single crystals
resolves10.1016/S0022-0248(01)01480-4
Wetting angle and surface tension of germanium melts on different substrate materials
resolves10.1016/0022-0248(80)90147-5
The behaviour of nonrotational striations in silicon
resolves10.1016/0022-0248(84)90355-5
The surface tension of liquid silicon
resolves10.1016/S0022-0248(97)00263-7
A review of measurement of thermophysical properties of silicon melt
resolves10.1103/PhysRev.91.512
The Surface Tension of Liquid Silicon and Germanium
The 15 references without a DOI — listed, not checked
no DOI — not checkedE.A. Fitzgerald, in: B.W. Wessels, E.N. Kaufmann, J.A. Giordmaine, J.B. Wachtmann Jr. (Eds.), Ann. Rev. Mat. Sci. 25 (1995) 417.
no DOI — not checked10.1016/S0022-0248(01)01394-X_BIB5
no DOI — not checked10.1016/S0022-0248(01)01394-X_BIB9
no DOI — not checked10.1016/S0022-0248(01)01394-X_BIB10
no DOI — not checkedK. Arafune, T. Kamei, A. Hirata, International Astronautical Congress, IAF-98-J.4.07, Melbourne, Australia, 1998.
no DOI — not checkedP. Tison, D. Camel, I. Tosello, J.-J. Favier, Proceedings of the First International Symposium on Hydromechanics and Heat/Mass Transfer in Microgravity, Perm/Moscow, 1991, pp. 121–131.
no DOI — not checkedA. Barz, Züchtung von GeSi-Mischkristallen, Ph.D. Thesis, Kristallographisches Institut, Albert-Ludwigs-Universität, Freiburg, 1999.
no DOI — not checkedA. Cröll, Floating-zone growth: the influence of process parameters and external fields, Habilitation Thesis, Kristallographisches Institut, Albert-Ludwigs-Universität Freiburg, 1996.
no DOI — not checkedG. Müller, A. Ostrogorsky, in: D.T.J. Hurle (Ed.), Handbook of Crystal Growth, Vol. 2b, Elsevier Science Publishers, North-Holland, Amsterdam, London, New York, Tokyo, 1994, pp. 709–819.
no DOI — not checkedN. Kaiser, A. Croell, F.R. Szofran, S.D. Cobb, K.W. Benz, J. Crystal Growth, 2001, accepted for publication.
no DOI — not checkedP. Dold, N. Kaiser, K.W. Benz, A. Cröll, F.R. Szofran, S. Cobb, M. Volz, M. Schweizer, 51st International Astronautical Congress, IAA-00-IAA.12.3.08, Rio de Janeiro, Brazil, 2000, pp. 1–11.
no DOI — not checkedY. Takamura, T. Aoyama, K. Kuribayashi, Proceedings of the Spacebound ’97, Montreal, Canada, 1997, pp. 229–235.
no DOI — not checked10.1016/S0022-0248(01)01394-X_BIB29
no DOI — not checkedM. Langen, T. Hibiya, M. Eguchi, I. Egry, 18th Japanese Thermophysical Property Symposium, 1997.
no DOI — not checked10.1016/S0022-0248(01)01394-X_BIB35
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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