Reference health
An overview of radiation effects on electronics in the space telecommunications environment
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91/91 checkable references clean · checked 2026-08-10
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
13 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 91 checked references that resolve
resolves10.1109/23.490755
Improved understanding of the Earth's radiation belts from the CRRES satellite
resolves10.1109/23.490756
Solar flare proton evaluation at geostationary orbits for engineering applications
resolves10.1109/23.490757
Measurements of the SEE environment from sea level to GEO using the CREAM and CREDO experiments
resolves10.1109/23.736536
Emerging optocoupler issues with energetic particle-induced transients and permanent radiation degradation
resolves10.1109/23.490902
Cosmic and terrestrial single-event radiation effects in dynamic random access memories
resolves10.1109/RELPHY.1995.513695
Boron compounds as a dominant source of alpha particles in semiconductor devices
resolves10.1109/23.490897
The influence of VLSI technology evolution on radiation-induced latchup in space systems
resolves10.1109/23.490899
Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
resolves10.1109/23.490900
A review of the techniques used for modeling single-event effects in power MOSFETs
resolves10.1103/PhysRevLett.50.450
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>Noise in Platinum Films and Ultrathin Platinum Wires: Evidence for a Common, Bulk Origin
resolves10.1109/19.69939
Ultra low-noise preamplifier for low-frequency noise measurements in electron devices
resolves10.1103/RevModPhys.60.537
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mi>f</mml:mi></mml:mrow></mml:mfrac></mml:math>noise and other slow, nonexponential kinetics in condensed matter
resolves10.1109/23.736522
Observed radiation-induced degradation of commercial-off-the-shelf (COTS) devices operating in low-Earth orbit
resolves10.1109/23.736521
Emerging radiation hardness assurance (RHA) issues: a NASA approach for space flight programs
resolves10.1016/0969-806X(94)90206-2
Accounting for time-dependent effects on CMOS total-dose response in space environments
resolves10.1109/23.658976
A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment
resolves10.1109/23.340519
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
resolves10.1109/23.556834
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides
resolves10.1109/23.556904
Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates
resolves10.1109/23.658978
Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures
resolves10.1109/23.124141
SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor
resolves10.1109/23.556879
A systems-oriented single event effects test approach for high speed digital phase-locked loops
resolves10.1109/23.556882
SEU experiments on an Artificial Neural Network implemented by means of digital processors
resolves10.1109/23.659055
Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions
resolves10.1109/23.736492
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
resolves10.1109/REDW.1998.731465
Single event effects on commercial SRAMs and power MOSFETs: final results of the CRUX flight experiment on APEX
resolves10.1109/REDW.1998.731469
Single event effect and radiation damage results for candidate spacecraft electronics
resolves10.1109/23.556849
Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor
resolves10.1109/23.736502
TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs
resolves10.1109/TNS.1980.4331098
Considerations for Hardening MOS Devices and Circuits for Low Radiation Doses
resolves10.1109/23.45426
Time dependent annealing of radiation-induced leakage currents in MOS devices
resolves10.1109/IEDM.1993.347273
Soft error rate and stored charge requirements in advanced high-density SRAMs
resolves10.1109/IEDM.1998.746324
A novel 0.20 μm full CMOS SRAM cell using stacked cross couple with enhanced soft error immunity
The 13 references without a DOI — listed, not checked
no DOI — not checkedHughes HL. Historical perspective. Ma TP, Dressendorfer PV, editors. Ionizing radiation effects in MOS devices and circuits. New York: Wiley, 1989, pp. 47–86 (and references therein)
no DOI — not checkedNSREC Archive of Radiation Effects Short Course Notebooks on CD-ROM, IEEE Product Order Code EC110, 1980–1998
no DOI — not checkedModeling space radiation environments
no DOI — not checkedPress WH, Flicker noises in astronomy and elsewhere. Comments Astrophys 1978;7(4):103 (and references therein)
no DOI — not checkedA first-principles approach to total-dose hardness assurance
no DOI — not checkedTotal ionizing dose effects on MOS and bipolar devices in the natural space radiation environment
no DOI — not checkedRadiation pre-screening of commercially available memories for space applications
no DOI — not checkedSystem level mitigation strategies
no DOI — not checkedProton effects and test issues for satellite designers
no DOI — not checkedBasic mechanisms for SEE
no DOI — not checkedTotal dose effects: modeling for present and future
no DOI — not checkedNew insights into fully-depleted SOI transistor response during total-dose irradiation
no DOI — not checkedNuclear threat to LEO satellites
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