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Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

https://doi.org/10.1016/s0169-4332(03)00843-2
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16/16 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 16 checked references that resolve
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Colorimetric properties of ZrN and TiN coatings prepared by DC reactive sputtering
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ZrN as barrier film between Au and SiO/sub 2/: microstructural stability of the system
resolves10.1016/S0169-4332(01)00916-3
High performance of thin nano-crystalline ZrN diffusion barriers in Cu/Si contact systems
resolves10.1364/AO.33.001993
Optical constants and Drude analysis of sputtered zirconium nitride films
resolves10.1016/0925-3467(93)90022-S
Optical characterization of sputtered semitransparent zirconium nitride films
resolves10.1016/S0040-6090(02)00530-8
Variation of color in titanium and zirconium nitride decorative thin films
resolves10.1016/S0039-6028(01)01280-8
First-principles study of the electronic properties of transition metal nitride surfaces
resolves10.1116/1.589916
Emission characteristics of ZrN thin film field emitter array fabricated by ion beam assisted deposition technique
resolves10.1007/s003390050522
Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering
resolves10.1016/S0169-4332(02)00925-X
Investigations on non-stoichiometric zirconium nitrides
resolves10.1016/S0040-6090(01)01762-X
Bias effect of ion-plated zirconium nitride film on Si(100)
resolves10.1109/IIT.1998.813880
Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition
resolves10.1016/S0169-4332(99)00233-0
Zirconium nitrides deposited by dual ion beam sputtering: physical properties and growth modelling
resolves10.1007/BF00722192
Properties of ZrN x prepared by ion-assisted deposition
resolves10.1007/BF00240801
Properties of Zr-N thin films prepared by the ion and vapour deposition method
resolves10.1016/0038-1098(86)90810-0
Resistivity and hall effect of reactively zirconium nitride films
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