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Fluctuation microscopy in the STEM

https://doi.org/10.1016/s0304-3991(02)00155-9
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22/22 checkable references clean · checked 2026-07-26

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

10 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 22 checked references that resolve
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Variable Coherence Microscopy: a Rich Source of Structural Information from Disordered Materials
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High Resolution Radial Distribution Function of Pure Amorphous Silicon
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High-energy x-ray diffraction study of pure amorphous silicon
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Raman study of the network disorder in sputtered and glow discharge <i>a</i>-Si:H films
resolves10.1016/S0022-3093(98)00483-9
Synchrotron radiation in the study of amorphous materials
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NMR evidence for excess non-bridging oxygen in an aluminosilicate glass
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Silicon site distributions in an alkali silicate glass derived by two-dimensional 29Si nuclear magnetic resonance
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High-efficiency multilevel zone plates for keV X-rays
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Paracrystallites found in evaporated amorphous tetrahedral semiconductors
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Absence of an Abrupt Phase Change from Polycrystalline to Amorphous in Silicon with Deposition Temperature
resolves10.1016/S0304-3991(00)00013-9
Atom pair persistence in disordered materials from fluctuation microscopy
resolves10.1016/0304-3991(85)90201-3
Auto-correlation analysis of high resolution electron micrographs of near-amorphous thin films
resolves10.1016/0304-3991(88)90327-0
Assessing the information content of HREM images
resolves10.1016/0304-3991(88)90007-1
Properties of electron microdiffraction patterns from amorphous materials
resolves10.1016/0304-3991(93)90020-X
Coherence and multiple scattering in “Z-contrast” images
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Advanced Computing in Electron Microscopy
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Reduced density function analysis using convergent electron illumination and iterative blind deconvolution
resolves10.1557/PROC-638-F14.40.1
Fluctuation Microscopy Studies of Medium-range Order Structures in Amorphous Tetrahedral Semiconductors
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The 10 references without a DOI — listed, not checked
no DOI — not checked10.1016/S0304-3991(02)00155-9_BIB3
no DOI — not checked10.1016/S0304-3991(02)00155-9_BIB16
no DOI — not checkedJ.M. Rodenburg, I.A. Rauf, A cross-correlation measure of order in ‘amorphous’ indium oxide, in: P.J. Goodhew, H.Y. Elder (Eds.), EMAG-MICRO 89: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference London, Institute of Physics Conference Series No. 98, IOP Bristol 1989, pp. 119–122.
no DOI — not checked10.1016/S0304-3991(02)00155-9_BIB19
no DOI — not checkedP.M. Voyles, Fluctuation microscopy of medium-range order in amorphous silicon, Ph.D. Dissertation, University of Illinois, Urbana-Champaign, 2001.
no DOI — not checked10.1016/S0304-3991(02)00155-9_BIB22
no DOI — not checked10.1016/S0304-3991(02)00155-9_BIB23
no DOI — not checkedP.M. Voyles, M.M.J. Treacy, J.M. Gibson, H-C. Jin, J.R. Abelson, Experimental methods and data analysis for fluctuation microscopy, in: J. Bentley, U. Dahmen, C. Allen, I. Petrov (Eds.), Advances in Materials Problem Solving with the Electron Microscope, Materials Research Society Symposium Proceedings 589 (2001) 155–160.
no DOI — not checkedD.A. Muller, unpublished.
no DOI — not checkedJ.R. Taylor, An Introduction to Error Analysis: The Study of Uncertainties in Physical Measurements, University Science Books, Mill Valley, CA, 1982, pp. 127–128.
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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