Reference health
Effect of lattice defects on the thermal conductivity of β-Si3N4
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20/20 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
4 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 20 checked references that resolve
resolves10.1111/j.1151-2916.1996.tb09002.x
High Thermal Conductivity in Silicon Nitride with Anisotropie Microstructure
resolves10.1557/JMR.1999.0206
Hot Isostatic Pressing to Increase Thermal Conductivity of Si<sub>3</sub>N<sub>4</sub> Ceramics
resolves10.1111/j.1151-2916.2000.tb01501.x
Thermal Conductivity of β‐Si
<sub>3</sub>
N
<sub>4</sub>
: II, Effect of Lattice Oxygen
resolves10.1111/j.1151-2916.1999.tb01835.x
Effect of Grain Size on the Thermal Conductivity of Si
<sub>3</sub>
N
<sub>4</sub>
resolves10.1111/j.1151-2916.1996.tb08721.x
Thermal Conductivity of Gas‐Pressure‐Sintered Silicon Nitride
resolves10.1111/j.1151-2916.2001.tb01141.x
MgSiN
<sub>2</sub>
Addition as a Means of Increasing the Thermal Conductivity of β‐Silicon Nitride
resolves10.2109/jcersj.109.1276_1046
Effect of Oxygen Content on Thermal Conductivity of Sintered Silicon Nitride.
resolves10.1016/S0955-2219(02)00074-2
Effect of lattice impurities on the thermal conductivity of β-Si3N4
resolves10.1111/j.1151-2916.1989.tb06003.x
Microstructural Changes in β‐Silicon Nitride Grains upon Crystallizing the Grain‐Boundary Glass
resolves10.1111/j.1151-2916.2001.tb00932.x
Microstructure in Silicon Nitride Containing β‐Phase Seeding: III, Grain Growth and Coalescence
resolves10.2109/jcersj.106.441
TEM Observation of Microstructure in Silicon Nitride Ceramics Containing Y<sub>2</sub>O<sub>3</sub>-Nd<sub>2</sub>O<sub>3</sub> Additive
resolves10.1016/S0955-2219(02)00292-3
Effect of the addition of β-Si3N4 nuclei on the thermal conductivity of β-Si3N4 ceramics
resolves10.1111/j.1151-2916.1999.tb02209.x
Thermal Conductivity of ß‐Si3N4: I, Effects of Various Microstructural Factors
resolves10.1111/j.1151-2916.2001.tb00662.x
Thermal Conductivity of β‐Si
<sub>3</sub>
N
<sub>4</sub>
: III, Effect of Rare‐Earth (RE = La, Nd, Gd, Y, Yb, and Sc) Oxide Additives
resolves10.1111/j.1151-2916.1993.tb08319.x
Statistical Analysis of the Intergranular Film Thickness in Silicon Nitride Ceramics
resolves10.1111/j.1151-2916.1997.tb02997.x
Transient Growth Bands in Silicon Nitride Cooled in Rare‐Earth‐Based Glass
resolves10.1557/JMR.1999.0396
Transmission electron microscopy observation of second-phase particles in β–Si<sub>3</sub>N<sub>4</sub> grains
resolves10.1016/S0955-2219(01)00250-3
Creep and stress-rupture behavior of Y2O3–Nd2O3-doped silicon nitrides with different additive contents
The 4 references without a DOI — listed, not checked
no DOI — not checkedThe thermal conductivity of ceramic dielectrics
no DOI — not checkedHigh-thermal conductivity of β-Si3N4 prepared by gas pressure sintering
no DOI — not checkedAnnealing effects for structural defects of silicon nitride ceramics
no DOI — not checkedYokota H., Yamada S., and Ibukiyama M. Effect of amount of β-Si3N4 particles on thermal conductivity of β-Si3N4 ceramics. J. Eur. Ceram. Soc. (in press).
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