Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 21 checked references that resolve
resolves10.1143/JJAP.36.L1217High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon
resolves10.1017/S143192760000862XFocused Ion Beam Milling for Site Specific Scanning and Transmission Electron Microscopy Specimen Preparation
resolves10.1017/S1431927600023369Direct Transmission Electron Microscope Observations of Doping Variations in InP-Based Semiconductor Laser Diodes
resolves10.1063/1.114206Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes
resolves10.1557/PROC-480-83Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method
resolves10.1016/S0304-3991(99)00081-9Development of a focused ion beam (FIB) technique to minimize X-ray fluorescence during energy dispersive X-ray spectroscopy (EDS) of FIB specimens in the transmission electron microscope (TEM)
resolves10.1007/s11661-998-0116-zTransmission electron microscope specimen preparation of Zn powders using the focused ion beam lift-out technique
resolves10.1143/JJAP.37.355Transmission Electron Microscope Sample Shape Optimization for Energy Dispersive X-Ray Spectroscopy Using the Focused Ion Beam Technique
resolves10.1557/PROC-409-45Plan-View Transmission Electron Microscopy Of Crack Tips In Bulk Materials
resolves10.1063/1.56881Plan view TEM sample preparation using the focused ion beam lift-out technique
resolves10.1002/sia.740230204Applications of focused ion beams in microelectronics production, design and development
resolves10.1143/JJAP.31.L1305Application of the Focused-Ion-Beam Technique for Preparing the Cross-Sectional Sample of Chemical Vapor Deposition Diamond Thin Film for High-Resolution Transmission Electron Microscope Observation
resolves10.1016/0040-6090(96)08718-4Investigation of thin-film transistors using a combination of focused ion beam etching and cross-sectional transmission electron microscopy observation
resolves10.1557/PROC-441-421In-Situ Tem Characterization of Whiskers on Al Electrodes for Thin-Film Transistors
The 10 references without a DOI — listed, not checked
no DOI — not checkedTransmission electron microscopy of focused ion beam induced damage at 50keV in Si
no DOI — not checkedCombined tripod polishing and FIB method for preparing semiconductor plan view specimens
no DOI — not checkedFocused ion beam milling and micromanipulation lift-out for site specific cross-section TEM specimen preparation
no DOI — not checkedLeslie, A.J., Pey, K.L., Sim, K.S., Beh, M.T.F., Goh, G.P., 1995. TEM sample preparation using FIB: Practical problems and artifacts, 21st International Symposium for Testing and Failure Analyis, ASM International, p. 353.
no DOI — not checkedNovel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam
no DOI — not checked10.1016/S0968-4328(99)00005-0_BIB65
no DOI — not checkedThe influence of incident ion range on the efficiency of TEM and SEM specimen preparation of focused ion beam milling
no DOI — not checkedTarutani, M., Takai, Y., Shimizu, R., Uda, K., Takahashi, H., 1993. Development of a focused ion beam apparatus for preparing cross-sectional transmission electron microscope specimens. Technology Reports of the Osaka University, Vol. 43, no. 2142–2162. pp. 167–173.
no DOI — not checkedCross-sectional TEM sample preparation method using FIB etching for thin-film transitor
no DOI — not checkedWalker, J.F., 1998. Techniques for control of stress in FIB-prepared TEM samples. In:Calderon Benavides, H.A., Yacaman, M.J. (Eds.). Electron Microscopy 1998, ICEM14, Symposium F, 3. Institute of Physics, Bristol, pp. 555.
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