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Modeling and simulation of grain growth in Si3N4. III. Tip shape evolution

https://doi.org/10.1016/s1359-6454(00)00250-0
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24/24 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

4 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 24 checked references that resolve
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Relation Between Strength, Fracture Energy, and Microstructure of Hot‐Pressed Si <sub>3</sub> N <sub>4</sub>
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Fracture Toughness of Si <sub>3</sub> N <sub>4</sub> as a Function of the Initial α‐Phase Content
resolves10.4028/www.scientific.net/MSF.47.84
Microstructural Development in Silicon Nitride Ceramics
resolves10.1111/j.1151-2916.1990.tb07610.x
Grain Growth During Gas‐Pressure Sintering of β‐Silicon Nitride
resolves10.1007/BF01184995
Gas pressure sintering of ?-silicon nitride
resolves10.1111/j.1151-2916.1993.tb03953.x
Mechanism of Grain Growth of β‐SiAlON
resolves10.1111/j.1151-2916.1993.tb03693.x
Kinetics of β‐Si <sub>3</sub> N <sub>4</sub> Grain Growth in Si <sub>3</sub> N <sub>4</sub> Ceramics Sintered under High Nitrogen Pressure
resolves10.1111/j.1151-2916.1993.tb06629.x
Comment on “Kinetics of β‐Si <sub>3</sub> N <sub>4</sub> Grain Growth in Si <sub>3</sub> N <sub>4</sub> Ceramics Sintered under High Nitrogen Pressure”
resolves10.1111/j.1151-2916.1988.tb06417.x
Mechanism of Grain Growth and α‐β’Transformation During Liquid‐Phase Sintering of β′‐Sialon
resolves10.1016/0956-7151(93)90108-5
Grain growth kinetics of Si3N4 during α/ß-transformation
resolves10.1111/j.1151-2916.1993.tb04015.x
Grain Growth Studies of Silicon Nitride Dispersed in an Oxynitride Glass
resolves10.4028/www.scientific.net/MSF.113-115.91
Grain Growth Studies in Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;-Ceramics
resolves10.1016/0022-0248(94)90509-6
Relations between crystal structure and growth morphology of β-Si3N4
resolves10.1016/S1359-6454(98)00290-0
Modeling and simulation of grain growth in Si3N4—I. Anisotropic Ostwald ripening
resolves10.1016/S1359-6454(98)00291-2
Modeling and simulation of grain growth in Si3N4—II. The α–β transformation
resolves10.1016/0272-8842(84)90018-X
Influence of powder properties and processing conditions on microstructure and mechanical properties of sintered Si3N4
resolves10.1007/BF01161167
Relationships between processing, microstructure and properties of dense and reaction-bonded silicon nitride
resolves10.1111/j.1151-2916.1999.tb02009.x
Microstructure and Fracture Toughness of Si <sub>3</sub> N <sub>4</sub> Ceramics: Combined Roles of Grain Morphology and Secondary Phase Chemistry
resolves10.1007/978-1-4899-3051-4
Phase Transformations in Metals and Alloys
resolves10.1111/j.1151-2916.1998.tb02676.x
Morphology of Silicon Nitride Grown from a Liquid Phase
resolves10.1016/0956-7151(92)90091-R
II—mean curvature and weighted mean curvature
resolves10.1016/0254-0584(84)90040-3
Densification and α-β transformation mechanisms during hot pressing of Si3N4 — Y2O3 — SiO2 composition
resolves10.1016/0364-5916(81)90019-5
Calculation of quasibinary and quasiternary oxyntiride systems-IV
resolves10.1016/0001-6160(56)90060-8
The growth of dispersed precipitates in solutions
The 4 references without a DOI — listed, not checked
no DOI — not checked10.1016/S1359-6454(00)00250-0_BIB3
no DOI — not checked10.1016/S1359-6454(00)00250-0_BIB14
no DOI — not checkedWallace, J.S., Kelly, J.F. Key Engineering Mater. 1994, 89–91, 501.
no DOI — not checked10.1016/S1359-6454(00)00250-0_BIB20
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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