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Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS<sub>2</sub>, MoSe<sub>2</sub>, MoTe<sub>2</sub>, WS<sub>2</sub>, and WSe<sub>2</sub> Crystals

https://doi.org/10.1021/acs.jpcc.2c01044
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

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The 49 checked references that resolve
resolves10.1103/PhysRevLett.105.136805
Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>MoS</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> : A New Direct-Gap Semiconductor
resolves10.1021/nl903868w
Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
resolves10.1103/PhysRevLett.113.076802
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1038/natrevmats.2016.55
Valleytronics in 2D materials
resolves10.1038/s41586-019-0976-y
Observation of moiré excitons in WSe2/WS2 heterostructure superlattices
resolves10.1038/s41586-019-0975-z
Evidence for moiré excitons in van der Waals heterostructures
resolves10.1038/s41563-021-01000-8
Bosonic condensation of exciton–polaritons in an atomically thin crystal
resolves10.1038/ncomms5966
Evolution of interlayer coupling in twisted molybdenum disulfide bilayers
resolves10.1021/nl5014597
Probing the Interlayer Coupling of Twisted Bilayer MoS<sub>2</sub> Using Photoluminescence Spectroscopy
resolves10.1016/j.apsusc.2020.145503
Temperature dependence of optical properties of monolayer WS2 by spectroscopic ellipsometry
resolves10.1080/05704928.2016.1166436
Temperature dependence of the critical points of monolayer MoS<sub>2</sub>by ellipsometry
resolves10.1038/s41598-018-21508-5
Temperature Dependence of the Dielectric Function of Monolayer MoSe2
resolves10.1103/PhysRevB.58.12575
Piezoreflectance study of band-edge excitons of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">ReS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>single crystals
resolves10.1088/0953-8984/16/39/032
Temperature dependences of energies and broadening parameters of the band-edge excitons of Re-doped WS<sub>2</sub>and 2H-WS<sub>2</sub>single crystals
resolves10.1103/PhysRevB.72.125313
Thermoreflectance study of the electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:msub><mml:mi mathvariant="normal">Se</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mo>)</mml:mo></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1063/1.4882301
Piezoreflectance study of near band edge excitonic-transitions of mixed-layered crystal Mo(SxSe1-x)2 solid solutions
resolves10.1103/PhysRev.89.1189
The Occurrence of Singularities in the Elastic Frequency Distribution of a Crystal
resolves10.1103/PhysRev.104.1263
Critical Points and Lattice Vibration Spectra
resolves10.1103/PhysRevB.88.115205
Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides
resolves10.1021/acs.nanolett.0c00694
Band Nesting in Two-Dimensional Crystals: An Exceptionally Sensitive Probe of Strain
resolves10.1038/s41598-017-15763-1
Photoacoustic and modulated reflectance studies of indirect and direct band gap in van der Waals crystals
resolves10.1063/1.5111965
Electromodulation spectroscopy of highly mismatched alloys
resolves10.1038/srep26663
Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions
resolves10.1080/21663831.2019.1702113
Hidden spin-polarized bands in semiconducting 2H-MoTe<sub>2</sub>
resolves10.1103/PhysRevB.88.045412
Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevLett.111.126801
Spin-Orbit Splitting in Single-Layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>Revealed by Triply Resonant Raman Scattering
resolves10.1063/1.5080300
Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy
resolves10.1038/s41467-017-00691-5
Interlayer excitons in a bulk van der Waals semiconductor
resolves10.1103/PhysRevB.102.235204
Interlayer and excited-state exciton transitions in bulk <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>2</mml:mn><mml:mi>H</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1063/1.4954157
Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2
resolves10.1021/acsomega.1c02788
Experimental and Theoretical Studies of the Electronic Band Structure of Bulk and Atomically Thin Mo<sub>1–<i>x</i></sub>W<i><sub>x</sub></i>Se<sub>2</sub> Alloys
resolves10.1016/0039-6028(73)90337-3
Third-derivative modulation spectroscopy with low-field electroreflectance
resolves10.1088/0953-8984/10/41/014
Temperature dependence of energies and broadening parameters of the band-edge excitons of single crystals
resolves10.1063/1.1368156
Band parameters for III–V compound semiconductors and their alloys
resolves10.1002/0470068329
Physics of Semiconductor Devices
resolves10.1007/978-1-4613-1469-1_6
Electron—Phonon Interaction
resolves10.1007/978-1-4757-5714-9_7
Electron—Phonon Interaction
resolves10.1002/jrs.4912
Deep UV resonance Raman spectroscopic study on electron‐phonon coupling in hexagonal III‐nitride wide bandgap semiconductors
resolves10.1103/PhysRevX.9.031019
Enhanced Electron-Phonon Interaction in Multivalley Materials
resolves10.1088/2053-1583/2/2/022001
<b>k</b> · <b>p</b> theory for two-dimensional transition metal dichalcogenide semiconductors
resolves10.1103/PhysRevB.88.085433
Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
resolves10.1103/PhysRevB.84.155413
Phonons in single-layer and few-layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>and WS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1039/C4CS00282B
Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
resolves10.1103/PhysRevB.88.195420
Orbital analysis of electronic structure and phonon dispersion in MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>, MoSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>, WS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>, and WSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>monolayers under strain
resolves10.3390/app6100284
Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater–Koster Tight-Binding Model
resolves10.1103/PhysRevB.77.235321
Size dependent, state-resolved studies of exciton-phonon couplings in strongly confined semiconductor quantum dots
resolves10.1021/jp803386g
State-Resolved Exciton−Phonon Couplings in CdSe Semiconductor Quantum Dots
resolves10.1103/PhysRevB.85.085418
Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy
resolves10.1021/acs.jpcc.5b02950
Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
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