Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 36 checked references that resolve
resolves10.1021/am3031129Origin of Rectification in Boron Nitride Heterojunctions to Silicon
resolves10.1021/acsami.9b21894High-Performance Ultraviolet Light-Emitting Diodes Using n-ZnO/p-hBN/p-GaN Contact Heterojunctions
resolves10.1021/acsami.9b05320Application of Hexagonal Boron Nitride to a Heat-Transfer Medium of an InGaN/GaN Quantum-Well Green LED
resolves10.1088/0957-4484/27/48/48LT03ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity
resolves10.1364/OE.23.018864Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector
resolves10.1143/JJAP.51.09MK02Carrier Transport Mechanism at the Interface between Metals and p-Type III–Nitrides Having Different Surface Electronic Structures
resolves10.1063/1.3592801The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures
resolves10.1063/1.3213613Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations
resolves10.1016/j.apsusc.2016.12.013Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface
resolves10.1063/1.100893Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion region
resolves10.1039/C9NR03094HBoron nitride: a promising material for proton exchange membranes for energy applications
resolves10.1021/acsnano.7b04022Corrugation in the Weakly Interacting Hexagonal-BN/Cu(111) System: Structure Determination by Combining Noncontact Atomic Force Microscopy and X-ray Standing Waves
resolves10.1063/1.4817296Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy
resolves10.1063/1.4707386Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
resolves10.1038/srep43644A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures
checked 2026-07-22 — re-checked daily as this page is visited;
titles and statuses come from Crossref and DataCite and are not part of the signed record
Both snippets point at the live badge image and link back to this page. The
badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.