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Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing in Phase-Change Memory Materials

32/32 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

5 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 32 checked references that resolve

resolves10.1038/nmat2028

Nanoelectronics from the bottom up

resolves10.1021/nl904092h

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

resolves10.1002/adfm.201202383

Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

resolves10.1021/nl201040y

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

resolves10.1073/pnas.1106161108

A biophysically-based neuromorphic model of spike rate- and timing-dependent plasticity

resolves10.1146/annurev.ne.12.030189.000305

Short-Term Synaptic Plasticity

resolves10.1146/annurev.neuro.31.060407.125639

Spike Timing–Dependent Plasticity: A Hebbian Learning Rule

resolves10.1523/JNEUROSCI.18-24-10464.1998

Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type

resolves10.1126/science.275.5297.213

Regulation of Synaptic Efficacy by Coincidence of Postsynaptic APs and EPSPs

resolves10.1002/adma.201203680

A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

resolves10.1038/nmat1359

Towards a universal memory?

resolves10.1103/PhysRevB.47.558

<i>Ab initio</i>molecular dynamics for liquid metals

resolves10.1038/nmat2157

Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

resolves10.1103/PhysRevLett.107.145702

<i>Ab Initio</i>Computer Simulation of the Early Stages of Crystallization: Application to<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Ge</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Sb</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>5</mml:mn></mml:msub></mml:math>Phase-Change Materials

resolves10.1002/adma.201304199

Guest‐Cage Atomic Interactions in a Clathrate‐Based Phase‐Change Material

resolves10.1002/pssb.201248563

Structural insights into the formation and evolution of amorphous phase‐change materials

resolves10.1063/1.4748961

Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

resolves10.1103/PhysRevB.50.17953

Projector augmented-wave method

resolves10.1103/PhysRevLett.77.3865

Generalized Gradient Approximation Made Simple

resolves10.1063/1.448118

Molecular dynamics with coupling to an external bath

resolves10.1063/1.3191670

Nanosecond switching in GeTe phase change memory cells

resolves10.1126/science.1201938

Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes

resolves10.1126/science.1221561

Breaking the Speed Limits of Phase-Change Memory

resolves10.1103/PhysRevB.86.144113

Nucleus-driven crystallization of amorphous Ge<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>Sb<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>Te<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>5</mml:mn></mml:msub></mml:math>: A density functional study

resolves10.1002/adma.201301940

Logic Computation in Phase Change Materials by Threshold and Memory Switching

resolves10.1073/pnas.1407633111

Ultrafast phase-change logic device driven by melting processes

resolves10.1016/0263-7855(96)00018-5

VMD: Visual molecular dynamics

resolves10.1007/978-94-007-4491-2_10

Phase Change Memory and Chalcogenide Materials for Neuromorphic Applications: Emphasis on Synaptic Plasticity

resolves10.1109/TED.2012.2217146

Low-Energy Robust Neuromorphic Computation Using Synaptic Devices

resolves10.1103/PhysRevB.85.174103

Neural network interatomic potential for the phase change material GeTe

resolves10.1103/PhysRevB.13.5188

Special points for Brillouin-zone integrations

resolves10.1103/PhysRevB.53.3764

Generalized Kohn-Sham schemes and the band-gap problem

The 5 references without a DOI — listed, not checked

no DOI — not checkedThe Organization of Behavior: A Neuropsychological Theory

no DOI — not checkedref13/cit13

no DOI — not checkedref31/cit31

no DOI — not checkedref33/cit33

no DOI — not checkedref34/cit34

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