Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 47 checked references that resolve
resolves10.1038/nnano.2012.193Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
resolves10.1038/nchem.1589The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
resolves10.1103/PhysRevLett.105.136805Atomically Thin
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
<mml:msub>
<mml:mi>MoS</mml:mi>
<mml:mn>2</mml:mn>
</mml:msub>
</mml:math>
: A New Direct-Gap Semiconductor
resolves10.1103/PhysRevB.85.205302Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1002/smll.201101016Fabrication of Single‐ and Multilayer MoS<sub>2</sub> Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature
resolves10.1021/ja404523sEnhanced Hydrogen Evolution Catalysis from Chemically Exfoliated Metallic MoS<sub>2</sub> Nanosheets
resolves10.1021/nn305275hEvolution of Electronic Structure in Atomically Thin Sheets of WS<sub>2</sub> and WSe<sub>2</sub>
resolves10.1021/nl302015vIntegrated Circuits Based on Bilayer MoS<sub>2</sub> Transistors
resolves10.1021/acsami.5b08580Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS<sub>2</sub> and MoSe<sub>2</sub> Using Refined Optothermal Raman Technique
resolves10.1088/1361-6528/aa7183<i>In situ</i>
visualization and detection of surface potential variation of mono and multilayer MoS
<sub>2</sub>
under different humidities using Kelvin probe force microscopy
resolves10.1246/cl.2001.772Hydrothermal Synthesis and Characterization of Single-Molecular-Layer MoS2 and MoSe2
resolves10.1002/adma.201104798Synthesis of Large‐Area MoS<sub>2</sub> Atomic Layers with Chemical Vapor Deposition
resolves10.1002/smll.201102654Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate
resolves10.1021/acsnano.5b00410Atomic Scale Microstructure and Properties of Se-Deficient Two-Dimensional MoSe<sub>2</sub>
resolves10.1038/nmat3010Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition
resolves10.1021/nl1022139Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
resolves10.1038/nmat3673Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
resolves10.1021/nn403454eControlled Growth of High-Quality Monolayer WS<sub>2</sub> Layers on Sapphire and Imaging Its Grain Boundary
resolves10.1021/nn405719xLarge-Area Synthesis of Highly Crystalline WSe<sub>2</sub> Monolayers and Device Applications
resolves10.1021/nl302584wThermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe<sub>2</sub> versus MoS<sub>2</sub>
resolves10.1038/nmat4064Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
resolves10.1038/srep15313Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector
resolves10.1038/srep01866Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films
resolves10.1021/nn501175kChemical Vapor Deposition Growth of Crystalline Monolayer MoSe<sub>2</sub>
resolves10.1039/C4NR02311KCVD synthesis of large-area, highly crystalline MoSe
<sub>2</sub>
atomic layers on diverse substrates and application to photodetectors
resolves10.1038/srep18596Controllable Growth of Large–Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film
resolves10.1002/chem.200204635Formation of MoS<sub>2</sub> Inorganic Fullerenes (IFs) by the Reaction of MoO<sub>3</sub> Nanobelts and S
resolves10.1021/jp500050rVapor Phase Growth and Imaging Stacking Order of Bilayer Molybdenum Disulfide
resolves10.1021/acsami.5b07038Synthesis of Large-Area Highly Crystalline Monolayer Molybdenum Disulfide with Tunable Grain Size in a H<sub>2</sub> Atmosphere
resolves10.1021/nl201874wPhotoluminescence from Chemically Exfoliated MoS<sub>2</sub>
resolves10.1364/OE.21.004908Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
resolves10.1063/1.4768218Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
resolves10.1021/nl5000906Large-Area Synthesis of Monolayer and Few-Layer MoSe<sub>2</sub>Films on SiO<sub>2</sub>Substrates
resolves10.1021/nn501693dAmbipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities
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