Every reference with a DOI in the deposited reference list resolved to a known
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withdrawal, or removal notice.
The 72 checked references that resolve
resolves10.1126/sciadv.1600097Self-powered textile for wearable electronics by hybridizing fiber-shaped nanogenerators, solar cells, and supercapacitors
resolves10.1038/natrevmats.2015.5Ionic liquids and their solid-state analogues as materials for energy generation and storage
resolves10.1021/ar2001233Chemical and Engineering Approaches To Enable Organic Field-Effect Transistors for Electronic Skin Applications
resolves10.1021/am400757qTunable Touch Sensor and Combined Sensing Platform: Toward Nanoparticle-based Electronic Skin
resolves10.1002/adfm.201103148Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
resolves10.1021/am5031648Self-Powered pH Sensor Based on a Flexible Organic–Inorganic Hybrid Composite Nanogenerator
resolves10.1021/nl801495pSmart Electronic Yarns and Wearable Fabrics for Human Biomonitoring made by Carbon Nanotube Coating with Polyelectrolytes
resolves10.1021/nn405893tFlexible Power Fabrics Made of Carbon Nanotubes for Harvesting Thermoelectricity
resolves10.1038/ncomms5921A bi-functional device for self-powered electrochromic window and self-rechargeable transparent battery applications
resolves10.1002/anie.201407365Large‐Scale Fabrication of Pseudocapacitive Glass Windows that Combine Electrochromism and Energy Storage
resolves10.1038/nmat4856A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
resolves10.1039/C4TC02119CTransCap: a monolithically integrated supercapacitor and electrolyte-gated transistor
resolves10.1021/ja108912xElectrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors
resolves10.1021/nl901596mElectrolyte-Gated Graphene Field-Effect Transistors for Detecting pH and Protein Adsorption
resolves10.1038/nmat2291Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic
resolves10.1038/srep14586Flexible nanoporous tunable electrical double layer biosensors for sweat diagnostics
resolves10.1021/am506805aMicrowave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor
resolves10.1038/ncomms4158Artificial synapse network on inorganic proton conductor for neuromorphic systems
resolves10.1002/adma.201502719Freestanding Artificial Synapses Based on Laterally Proton‐Coupled Transistors on Chitosan Membranes
resolves10.1021/ja909110sHydrogenation-Induced Surface Polarity Recognition and Proton Memory Behavior at Protic-Ionic-Liquid/Oxide Electric-Double-Layer Interfaces
resolves10.1021/jp3024233Ionic Liquids for Electrolyte-Gating of ZnO Field-Effect Transistors
resolves10.1002/adfm.200801633High‐Density Carrier Accumulation in ZnO Field‐Effect Transistors Gated by Electric Double Layers of Ionic Liquids
resolves10.1002/adma.201103173Low‐Temperature, Solution‐Processed and Alkali Metal Doped ZnO for High‐Performance Thin‐Film Transistors
resolves10.1021/nl4015638Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
resolves10.1038/ncomms11892Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures
resolves10.1038/ncomms2784Nanobatteries in redox-based resistive switches require extension of memristor theory
resolves10.1039/c2nr30413aNanoionic transport and electrochemical reactions in resistively switching silicon dioxide
resolves10.1021/jp204498eAccurate Simulations of Electric Double Layer Capacitance of Ultramicroelectrodes
resolves10.1093/nsr/nww072Pseudocapacitive materials for electrochemical capacitors: from rational synthesis to capacitance optimization
resolves10.1039/C5CS00580AElectrochemical capacitors: mechanism, materials, systems, characterization and applications
resolves10.1039/c3ee44164dPseudocapacitive oxide materials for high-rate electrochemical energy storage
resolves10.1039/c3nr33734kSelf-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications
resolves10.1109/LED.2015.2445333Oxide Electric-Double-Layer Transistors Gated by a Chitosan-Based Biopolymer Electrolyte
resolves10.1063/1.3206917High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature
resolves10.1039/C6NR01383JNanoscale electrochemistry using dielectric thin films as solid electrolytes
resolves10.1021/jp5010693Sodium Storage and Pseudocapacitive Charge in Textured Li<sub>4</sub>Ti<sub>5</sub>O<sub>12</sub> Thin Films
resolves10.1038/nmat3601High-rate electrochemical energy storage through Li+ intercalation pseudocapacitance
resolves10.1038/srep11960Iso-Oriented Anatase TiO2 Mesocages as a High Performance Anode Material for Sodium-Ion Storage
resolves10.1039/c3cp52308jA Na3V2(PO4)3 cathode material for use in hybrid lithium ion batteries
resolves10.1038/ncomms11203Balancing surface adsorption and diffusion of lithium-polysulfides on nonconductive oxides for lithium–sulfur battery design
resolves10.1021/jp970490qLi<sup>+</sup> Ion Insertion in TiO<sub>2</sub> (Anatase). 2. Voltammetry on Nanoporous Films
resolves10.1063/1.4945579Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure
resolves10.1063/1.4940384Probing complementary memristive characteristics in oxide based memory device via non-conventional chronoamperometry approach
resolves10.1002/adfm.201402286Memristor Kinetics and Diffusion Characteristics for Mixed Anionic‐Electronic SrTiO<sub>3‐δ</sub> Bits: The Memristor‐Based Cottrell Analysis Connecting Material to Device Performance
resolves10.1039/c3nr02987eMemory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors
resolves10.1021/acs.nanolett.5b02190Three-Dimensional Networked Nanoporous Ta<sub>2</sub>O<sub>5–<i>x</i></sub> Memory System for Ultrahigh Density Storage
resolves10.1109/LED.2013.2286074Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors
resolves10.1088/0022-3727/48/28/285103Indium-zinc-oxide electric-double-layer thin-film transistors gated by silane coupling agents 3-triethoxysilylpropylamine–graphene oxide solid electrolyte
resolves10.1063/1.4975061High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets
resolves10.1002/adfm.201202500High‐Speed, Low‐Voltage, and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field‐Effect Transistors
resolves10.1063/1.4729915Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks
resolves10.1063/1.3319591Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
resolves10.1523/JNEUROSCI.18-24-10464.1998Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type
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