Every reference with a DOI in the deposited reference list resolved to a known
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withdrawal, or removal notice.
The 35 checked references that resolve
resolves10.1038/ncomms2832Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring
resolves10.1038/nmat2834Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers
resolves10.1038/nnano.2011.184Skin-like pressure and strain sensors based on transparent elastic films of carbon nanotubes
resolves10.1021/nn403838yHuman Skin Based Triboelectric Nanogenerators for Harvesting Biomechanical Energy and as Self-Powered Active Tactile Sensor System
resolves10.1002/adma.201400021A Shape‐Adaptive Thin‐Film‐Based Approach for 50% High‐Efficiency Energy Generation Through Micro‐Grating Sliding Electrification
resolves10.1038/nrn2621Coding and use of tactile signals from the fingertips in object manipulation tasks
resolves10.1002/adma.201504424Flexible Organic Tribotronic Transistor Memory for a Visible and Wearable Touch Monitoring System
resolves10.1002/adfm.201403577Self‐Powered Trace Memorization by Conjunction of Contact‐Electrification and Ferroelectricity
resolves10.1002/adfm.201505569Resistive Switching Memory Integrated with Nanogenerator for Self‐Powered Bioimplantable Devices
resolves10.1038/ncomms2110Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
resolves10.1021/am4007287Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate
resolves10.1038/nmat2748Complementary resistive switches for passive nanocrossbar memories
resolves10.1021/nl8037689High-Density Crossbar Arrays Based on a Si Memristive System
resolves10.1021/nl900006gFully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
resolves10.1038/nmat3054Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
resolves10.1002/adfm.201103148Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
resolves10.1021/nl904092hNanoscale Memristor Device as Synapse in Neuromorphic Systems
resolves10.1002/adma.201504754Skin‐Inspired Haptic Memory Arrays with an Electrically Reconfigurable Architecture
resolves10.1038/nmat3070A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
resolves10.1021/acsami.5b01080High On–Off Ratio Improvement of ZnO-Based Forming-Free Memristor by Surface Hydrogen Annealing
resolves10.1002/adma.201201506Observation of Conductance Quantization in Oxide‐Based Resistive Switching Memory
resolves10.1007/s12274-016-1006-0Influence of carrier concentration on the resistive switching characteristics of a ZnO-based memristor
resolves10.1021/nn303233rZnO<sub>1–<i>x</i></sub> Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application
resolves10.1039/c3ee42311eA transparent single-friction-surface triboelectric generator and self-powered touch sensor
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